Gradients and Assumptions Affect Interpretation of Laboratory-Measured Gas-Phase Transport

2015 ◽  
Vol 79 (4) ◽  
pp. 1018-1029 ◽  
Author(s):  
Robert P. Ewing ◽  
Behzad Ghanbarian ◽  
Allen G. Hunt
Keyword(s):  
Gas Phase ◽  
Gas Phase Transport ◽  
Phase Transport

scholarly journals NMR imaging of low pressure, gas-phase transport in packed beds using hyperpolarized xenon-129

AIChE Journal ◽  
2015 ◽  
Vol 61 (11) ◽  
pp. 4013-4019 ◽  
Author(s):  
Galina Pavlovskaya ◽  
Joseph Six ◽  
Thomas Meersman ◽  
Navin Gopinathan ◽  
Sean P. Rigby
Keyword(s):  
Gas Phase ◽  
Low Pressure ◽  
Nmr Imaging ◽  
Packed Beds ◽  
Hyperpolarized Xenon ◽  
Gas Phase Transport ◽  
Phase Transport

Gas-phase transport and kinetics in pulsed-laser CVD

1990 ◽  
Vol 46 (1-4) ◽  
pp. 102-107 ◽  
Author(s):  
L. Konstantinov ◽  
R. Nowak ◽  
P. Hess
Keyword(s):  
Gas Phase ◽  
Pulsed Laser ◽  
Gas Phase Transport ◽  
Laser Cvd ◽  
Phase Transport

scholarly journals Molecular valves for controlling gas phase transport made from discrete ångström-sized pores in graphene

2015 ◽  
Vol 10 (9) ◽  
pp. 785-790 ◽  
Author(s):  
Luda Wang ◽  
Lee W. Drahushuk ◽  
Lauren Cantley ◽  
Steven P. Koenig ◽  
Xinghui Liu ◽  
...  
Keyword(s):  
Gas Phase ◽  
Gas Phase Transport ◽  
Phase Transport

Control of Oxygen Content in Heavily Sb-Doped CZ Si Crystal by Adjusting Ambient Pressure

1995 ◽  
Vol 378 ◽  
Author(s):  
Koji Izunome ◽  
Xinming Huang ◽  
Shiniji Togawa ◽  
Kazutaka Terashima ◽  
Shigeyuki Kimura
Keyword(s):  
Single Crystals ◽  
Gas Phase ◽  
Oxygen Concentration ◽  
Evaporation Rate ◽  
Ambient Pressure ◽  
Silicon Crystals ◽  
Silicon Melt ◽  
Sb Doping ◽  
Gas Phase Transport ◽  
Phase Transport

AbstractIn Czochralski-grown (CZ) silicon single crystals, antimony (Sb) doping decreases the oxygen concentration by enhancing oxygen evaporation from the melt surface. In this study, Ar ambient pressures of around 100 Torr over the silicon melt were found to suppress evaporation of oxide species. To clarify the effect of the growth chamber ambient pressure on oxygen concentration, heavily Sb-doped CZ silicon crystals were grown under Ar pressures of 30, 60, and 100 Torr. Increasing Ar pressure increases the oxygen and Sb concentrations at the melt surface. The oxygen concentration under an Ar pressure of 100 Torr was 1.2 times higher that under 30 Torr when the solidified fractions are 0.5 or larger. The oxygen evaporation rate is controllable by gas phase transport of Sb2O at high Ar pressures.

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