scholarly journals The Energetic Neutral Atom Beam Lithography & Epitaxy (ENABLE) Capability at LANL: GaN-related Materials

2014 ◽  
Author(s):  
Mark A. Hoffbauer
2009 ◽  
Vol 6 (S2) ◽  
pp. S409-S412 ◽  
Author(s):  
T. L. Williamson ◽  
M. A. Hoffbauer ◽  
K. M. Yu ◽  
L. A. Reichertz ◽  
M. E. Hawkridge ◽  
...  

2005 ◽  
Vol 872 ◽  
Author(s):  
Elshan A. Akhadov ◽  
Alexander H. Mueller ◽  
Mark A. Hoffbauer

AbstractEnergetic neutral atom beam lithography/epitaxy (ENABLE) is a versatile technique recently developed for patterning nanoscale features into polymer substrates. ENABLE achieves the direct activation of surface chemical reactions by exposing substrates to a beam of energetic neutral atoms. Polymers that form volatile oxidation products may be anisotropically etched using a neutral beam of oxygen atoms at rates exceeding 100 nm/min, avoiding problems associated with charged species inherent to other etching techniques. We report on a top-down approach for producing high-aspect-ratio nanoscale structures in polymeric materials using ENABLE. Masking techniques suitable for ENABLE etching are discussed along with applications involving the rapid production of nanoscale features over large areas.


2021 ◽  
Vol 254 (2) ◽  
pp. 32
Author(s):  
Bishwas L. Shrestha ◽  
Eric J. Zirnstein ◽  
Jacob Heerikhuisen ◽  
Gary P. Zank

Sign in / Sign up

Export Citation Format

Share Document