scholarly journals Поверхностно-излучающий квантово-каскадный лазер с кольцевым резонатором

Author(s):  
А.В. Бабичев ◽  
Е.С. Колодезный ◽  
А.Г. Гладышев ◽  
Д.В. Денисов ◽  
Г.В. Вознюк ◽  
...  

The results of studies of quantum-cascade laser with a surface emission through a grating formed in the layers of the top cladding of the waveguide by ion beam milling are presented. The active region of the QCL heterostructure was formed based on a heteropair of In0.53Ga0.47As / Al0.48In0.52As solid alloys with two-phonon resonance design. It is shown that lasing at room temperature close to 7.9 µm is demonstrated for a laser with a ring diameter of 191 µm. The mode spacing corresponds to whispering gallery modes.

2020 ◽  
Vol 128 (8) ◽  
pp. 1165
Author(s):  
А.В. Бабичев ◽  
Д.А. Пашнев ◽  
А.Г. Гладышев ◽  
А.С. Курочкин ◽  
Е.С. Колодезный ◽  
...  

A half-ring resonator design of a 7-8 μm range quantum-cascade laser with different radius values has been proposed and implemented. For a quantum-cascade laser with a radius of a half-ring resonator of 191 μm, lasing with a radiation spectrum width of 474 nm (82 cm^-1) was demonstrated at low temperatures. The FSR in such lasers was determined by the whispering gallery modes typical for ring resonators. At room temperature, the width of the lasing spectrum was 190 nm (31 cm^–1), which is caused by a decrease in gain and a possible increase in internal losses with increasing temperature. An increase in the cavity radius up to 291 μm made it possible to realize room temperature lasing with whispering gallery modes with a radiation spectrum width of 249 nm (40 cm^-1), by reducing losses on the mirrors.


Author(s):  
А.В Бабичев ◽  
Е.С Колодезный ◽  
А.Г Гладышев ◽  
Д.В Денисов ◽  
Г.В Вознюк ◽  
...  

The results of studies of ring quantum-cascade laser with a surface emission with radiation output through a textured layer formed in the layers of the top cladding of the waveguide by ultrahigh vacuum ion beam milling are presented. The far-field profile shows that the radiation is output through the windows with a textured layer in the range of angles of ~ 63–75 degrees to the normal.


2019 ◽  
Vol 114 (3) ◽  
pp. 031102 ◽  
Author(s):  
Y. Liang ◽  
Z. Wang ◽  
J. Wolf ◽  
E. Gini ◽  
M. Beck ◽  
...  

2019 ◽  
Vol 127 (3) ◽  
pp. 479-482
Author(s):  
V. V. Dudelev ◽  
V. V. Mamutin ◽  
D. V. Chistyakov ◽  
E. A. Kognovitskaya ◽  
V. I. Kuchinskii ◽  
...  

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Daniel Andres-Penares ◽  
Mojtaba Karimi Habil ◽  
Alejandro Molina-Sánchez ◽  
Carlos J. Zapata-Rodríguez ◽  
Juan P. Martínez-Pastor ◽  
...  

AbstractThe manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require from the so elusive out-of-plane photon sources to achieve an efficient coupling of radiated light into planar devices. Here we propose a versatile spectroscopic method that enables the identification of the out-of-plane component of dipoles. The method is based on the selective coupling of light emitted by in-plane and out-of-plane dipoles to the whispering gallery modes of spherical dielectric microresonators, in close contact to them. We have applied this method to demonstrate the existence of dipoles with an out-of-plane orientation in monolayer WSe2 at room temperature. Micro-photoluminescent measurements, numerical simulations based on finite element methods, and ab-initio calculations have identified trions as the source responsible for this out-of-plane emission, opening new routes for realizing on-chip integrated systems with applications in information processing and quantum communications.


2007 ◽  
Vol 15 (16) ◽  
pp. 10052 ◽  
Author(s):  
Sébastien Steiner ◽  
Jean Hare ◽  
Valérie Lefèvre-Seguin ◽  
Jean-Michel Gérard

2007 ◽  
Vol 90 (14) ◽  
pp. 141102 ◽  
Author(s):  
J. S. Xia ◽  
Y. Ikegami ◽  
K. Nemoto ◽  
Y. Shiraki

Author(s):  
Е.В. Куницына ◽  
М.А. Ройз ◽  
И.А. Андреев ◽  
Е.А. Гребенщикова ◽  
А.А. Пивоварова ◽  
...  

Photodiodes developed in the GaSb-InAs system were first used for investigation the spectral characteristics of single and coupled disk lasers emitting on whispering gallery modes at 2.2–2.3 µm. The capacity of the photodiodes with a diameter of photosensitive area of 2.0 mm was C=520 pF at U=−2 V, which corresponds to a time constant of tau=53 ns. It is shown that the parameters of the developed photodiodes make it possible to detect the emission of quantum-sized disk lasers at room temperature and not to use cryogenic cooling.


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