scholarly journals Нетривиальная зависимость спектральных характеристик экситонов в квантовых ямах от мощности резонансного оптического возбуждения

2021 ◽  
Vol 55 (11) ◽  
pp. 963
Author(s):  
Д.Ф. Мурсалимов ◽  
А.В. Михайлов ◽  
А.С. Курдюбов ◽  
А.В. Трифонов ◽  
И.В. Игнатьев
Keyword(s):  
Simple Model ◽  
Quantum Well ◽  
Heavy Hole ◽  
Reflectance Spectroscopy ◽  
Light Hole ◽  
Exciton Resonance ◽  
Exciton Transition ◽  
Free Carriers

Basic exciton parameters, the energy of exciton transition and the radiative and nonradiative broadenings, are experimentally studied by means of reflectance spectroscopy for a heterostructure with the 14-nm GaAs/AlGaAs quantum well. Particular attention is paid to the nonradiative broadening which is sensitive to optical creation of free carriers and long-lived nonradiative excitons. A sublinear increase of the broadening of the heavy-hole and light-hole exciton resonances is observed when the light-hole exciton resonance is excited with increasing power. A simple model is developed, which allows one to well reproduce the observed dependence.

scholarly journals Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

2021 ◽  
Vol 4 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Fathallah Jabouti ◽  
Haddou El Ghazi ◽  
Redouane En-nadir ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Binding Energies ◽  
Exciton Transition ◽  
Impurity Position ◽  
Optical Susceptibility ◽  
Peak Energy ◽  
Eigen Values ◽  
Excitonic States ◽  
Photoluminescence Peak

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).

Superposition of light-hole and heavy-hole bandgaps in strained quantum-well structures

1991 ◽  
Vol 10 (1) ◽  
pp. 99-106 ◽  
Author(s):  
I.J. Fritz ◽  
J.F. Klem ◽  
T.M. Brennan ◽  
J.R. Wendt ◽  
T.E. Zipperian
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Well Structures ◽  
Strained Quantum Well

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

PHOTOCONDUCTIVITY, PHOTOREFLECTANCE AND PHOTOLUMINESCENCE OF GaAs-AlAs MULTIPLE QUANTUM WELLS

1985 ◽  
Vol 56 ◽  
Author(s):  
H. NEFF ◽  
K. J. BACHMANN ◽  
W. D. LAIDIG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Heavy Hole ◽  
Multiple Quantum Well ◽  
Light Hole ◽  
Multiple Quantum ◽  
Indirect Transition ◽  
Temperature Dependent ◽  
Direct Inter ◽  
Phonon Absorption

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.

Enhanced electroabsorption in tensile-strained GayIn1−yAs/AlxIn1−xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

1997 ◽  
Vol 70 (21) ◽  
pp. 2855-2857 ◽  
Author(s):  
T. Schwander ◽  
M. Anhegger ◽  
N. Bürger ◽  
T. Feifel ◽  
K. Hirche ◽  
...  
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Well Structures

Calculation of Modal Gain for Terahertz Lasers Based on HgCdTe Heterostructures with Quantum Wells

2016 ◽  
Vol 25 (03n04) ◽  
pp. 1640018 ◽  
Author(s):  
Alexander A. Dubinov ◽  
Vladimir Ya. Aleshkin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Heavy Hole ◽  
Light Hole ◽  
Modal Gain ◽  
Terahertz Lasers

In this work we calculate and analyze modal gain for terahertz lasers based on HgCdTe heterostructures with quantum wells (QWs) taking into account the symmetry-enforced light hole-heavy hole mixing at the quantum well interfaces. We have found that modal gain for a structure with 5 HgTe QWs of the 5.2 nm width can be 33 cm−1 at 9 THz.

Modulated Reflectance Spectroscopy of CdTe-Cd1−xMnxTe Multiple Quantum Wells and Superlattices Grown by Pulsed Laser Evaporation and Epitaxy

1992 ◽  
Vol 285 ◽  
Author(s):  
D. Labrie ◽  
J.J. Dubowski
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Multiple Quantum Well ◽  
Pulsed Laser ◽  
Reflectance Spectroscopy ◽  
Light Hole ◽  
Laser Evaporation ◽  
Multiple Quantum ◽  
Superlattice Structures

ABSTRACTPiezoreflectance and photoreflectance spectroscopies have been used to investigate the electronic properties of CdTe-Cd1-xMnxTe (x − 0.10) multiple quantum well and superlattice structures grown by Pulsed Laser Evaporation and Epitaxy (PLEE). The structures with the CdTe well widths from 54Å to 245Å have been investigated. The spectra exhibit a series of signatures which are attributed to free exciton transitions occuring between the heavy-hole and light-hole bands and the upper electron subbands within the CdTe well layers. The spectra indicate that the PLEE grown structures are of an excellent quality typical of the best currently available material.

Simultaneous blue‐ and red‐shift of light‐hole and heavy‐hole band in a novel variable‐strain quantum well heterostructure

1995 ◽  
Vol 66 (5) ◽  
pp. 607-609 ◽  
Author(s):  
Weimin Zhou ◽  
H. Shen ◽  
J. Pamulapati ◽  
P. Cooke ◽  
M. Dutta
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Red Shift ◽  
Hole Band
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