Superposition of light-hole and heavy-hole bandgaps in strained quantum-well structures

1991 ◽  
Vol 10 (1) ◽  
pp. 99-106 ◽  
Author(s):  
I.J. Fritz ◽  
J.F. Klem ◽  
T.M. Brennan ◽  
J.R. Wendt ◽  
T.E. Zipperian
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Well Structures ◽  
Strained Quantum Well

Enhanced electroabsorption in tensile-strained GayIn1−yAs/AlxIn1−xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

1997 ◽  
Vol 70 (21) ◽  
pp. 2855-2857 ◽  
Author(s):  
T. Schwander ◽  
M. Anhegger ◽  
N. Bürger ◽  
T. Feifel ◽  
K. Hirche ◽  
...  
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Well Structures

scholarly journals Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures

1987 ◽  
Vol 51 (14) ◽  
pp. 1091-1093 ◽  
Author(s):  
G. P. Kothiyal ◽  
S. Hong ◽  
N. Debbar ◽  
P. K. Bhattacharya ◽  
J. Singh
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Well Structures ◽  
Excitonic Absorption

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

1.3 μm luminescence in (InAs) n /(GaAs) n strained quantum-well structures grown on GaAs

2020 ◽  
pp. 577-630
Author(s):  
E. J. Roan ◽  
K. Y. Cheng ◽  
P. J. Pearah ◽  
X. Liu ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

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