Вероятность ионизации атомов, распыленных при бомбардировке поверхности металлов одно- и многозарядными ионами

The processes of ionization of atoms sputtered under bombardment of clean metal surface by singly and multiply charged ions with kinetic energy of several keV were studied. Within the framework of simple phenomenological model of ion formation, the relaxation of local electron excitation in metal was taking into account. Analytical expressions for estimation of ionization probability of sputtered atoms was obtain. It was shown, that in comparison with singly charged ions, bombardment of metals with multiply charged ions results to significant increase of ionization probability of sputtered atoms due to more efficient excitation of electrons and increase of relaxation time of this excitation.

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Massenspektroskopische Festkörperuntersuchungen verbesserter Reproduzierbarkeit mit dem Gleichstrom-Abreißfunken im Vakuum zur lonenerzeugung

Zeitschrift für Naturforschung A ◽

10.1515/zna-1963-8-907 ◽

1963 ◽

Vol 18 (8-9) ◽

pp. 926-941 ◽

Cited By ~ 1

Author(s):

K. D. Schuy ◽

H. Hintenberger

Keyword(s):

Mass Spectra ◽

Multiply Charged Ions ◽

Doubly Charged Ions ◽

Multiply Charged ◽

Singly Charged ◽

Main Component ◽

Doubly Charged ◽

Charged Ions ◽

Spectrum Evaluation ◽

Speed Of Analysis

Mass spectra obtained with the disjunctive d.c.-spark in vacuum show considerable improvement in accuracy and reproducibility over the conventional r.f.-spark of the DEMPSTER type. Higher ion currents increase the speed of analysis. A number of mass spectra were produced with a spectroscopic steel standard. The methods of visual and photometric spectrum evaluation are discussed in detail, using two quantities defined as “element sensitivity” and “normalized ionization sensitivity”. The former is a measure of how much more sensitive a given element can be photographically detected with the mass spectrograph than the main component of the sample (matrix element), while the latter indicates how much more sensitive multiply-charged ions of an element can be detected on the plate than singly-charged ions of the same element. Both element- and ionization sensitivities are reproducible to within approximately 20%. Furthermore, it is found, for most elements investigated, that the lines due to doubly-charged ions are more intense than those due to singly-charged ions and that the differences of element sensitivities of various elements decrease for ions of higher charge. The reproducibility of multiply-charged ions permits their use in the quantitative analysis of the sample.

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Direct observation of the decomposition of multiply charged ions into singly charged fragments

Vacuum ◽

10.1016/0042-207x(65)92198-6 ◽

1965 ◽

Vol 15 (9) ◽

pp. 472

Keyword(s):

Direct Observation ◽

Multiply Charged Ions ◽

Multiply Charged ◽

Singly Charged ◽

Charged Ions

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Direct Observation of the Decomposition of Multiply Charged Ions into Singly Charged Fragments

The Journal of Chemical Physics ◽

10.1063/1.1695752 ◽

1965 ◽

Vol 42 (10) ◽

pp. 3501-3509 ◽

Cited By ~ 69

Author(s):

K. E. McCulloh ◽

T. E. Sharp ◽

H. M. Rosenstock

Keyword(s):

Direct Observation ◽

Multiply Charged Ions ◽

Multiply Charged ◽

Singly Charged ◽

Charged Ions

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Влияние зарядового состояния ионов ксенона на профиль распределения по глубине при имплантации в кремний

Физика и техника полупроводников ◽

10.21883/ftp.2019.08.47990.9108 ◽

2019 ◽

Vol 53 (8) ◽

pp. 1030

Author(s):

Ю.В. Балакшин ◽

А.В. Кожемяко ◽

S. Petrovic ◽

M. Erich ◽

А.А. Шемухин ◽

...

Keyword(s):

Single Crystal Silicon ◽

Rutherford Backscattering ◽

Rutherford Backscattering Spectroscopy ◽

Multiply Charged Ions ◽

Crystal Silicon ◽

Multiply Charged ◽

Irradiation Energy ◽

Singly Charged ◽

Channeling Effect ◽

Charged Ions

AbstractExperimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10^14–10^15) ion/cm^2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

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