Series Resistance Both Temperature and Wavelength Dependent in Silicon Solar Cell under Steady State

2017 ◽  
Vol 6 (1) ◽  
pp. 21-26
Author(s):  
Ibrahima DIATTA ◽  
◽  
Ibrahima LY ◽  
Marcel Sitor DIOUF ◽  
Youssou TRAORE ◽  
...  
Keyword(s):  
Steady State ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Series Resistance

scholarly journals The impact of silicon solar cell architecture and cell interconnection on energy yield in hot & sunny climates

2017 ◽  
Vol 10 (5) ◽  
pp. 1196-1206 ◽  
Author(s):  
Jan Haschke ◽  
Johannes P. Seif ◽  
Yannick Riesen ◽  
Andrea Tomasi ◽  
Jean Cattin ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Series Resistance ◽  
Energy Yield ◽  
Cell Architecture ◽  
The Impact

A series resistance induced by cell interconnections will lead to a worse TCPMPP of solar modules compared with cells.

scholarly journals Series resistance effect on the output parameters of buried emitter silicon solar cells

1999 ◽  
Vol 1 (2) ◽  
pp. 117-129
Author(s):  
Gamal M. Eldallal ◽  
Mohamed Y. Feteha ◽  
Mostafa E. Mousaa
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Theoretical Model ◽  
Equivalent Circuit ◽  
Silicon Solar Cell ◽  
Series Resistance ◽  
Silicon Solar Cells ◽  
Published Data

A realistic distributed equivalent circuit for the buried emitter silicon solar cell is presented taking into consideration the carriers paths through the planar and vertical junctions. In addition, a new theoretical model for the cell characteristics including the cell's mismatching, series resistance, different junctions (planar and vertical) and junctions geometry is considered in this work. The results are compared with the published data.

scholarly journals Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

2018 ◽  
Vol 09 (02) ◽  
pp. 189-201
Author(s):  
Ousmane Diasse ◽  
Amadou Diao ◽  
Mamadou Wade ◽  
Marcel Sitor Diouf ◽  
Ibrahima Diatta ◽  
...  
Keyword(s):  
Steady State ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Velocity Modeling ◽  
Recombination Velocity

Influence of Temperature on Methods for Determining Silicon Solar Cell Series Resistance

2007 ◽  
Vol 129 (3) ◽  
pp. 331-335 ◽  
Author(s):  
M. Sabry ◽  
Ahmed E. Ghitas
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Series Resistance ◽  
Cell Model ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Shunt Resistance ◽  
Solar Cell Performance ◽  
Influence Of Temperature On ◽  
Cell Series

Series resistance (Rs) is considered to be one of the most important parameters affecting solar cell performance, especially those operating under concentrated solar radiation. Many methods have been proposed where the estimated Rs values do not coincide or even come close to each other. In this paper, seven methods for determining Rs are reviewed and verified experimentally using a commercial single-crystal silicon solar cell (104cm2 of total area). Their differences lie principally in: (1) number of diodes quoted in the solar cell model; (2) other assumptions (constant ideality factor or not, infinite, or finite shunt resistance); and (3) simultaneous determination of other parameters or not. Based on these methods, Rs values were derived by extracting the necessary parameters from the measured I–V characteristics of the cell at different illuminations and cell temperatures. According to these methods, the obtained Rs values varied greatly in comparison with each other as well as its trend with temperature variation.

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