Effect of oxygen implantation on the corrosion-electrochemical behavior of Cu-Mn alloy

2020 ◽  
pp. 5-13
Author(s):  
V.L. Vorobiev ◽  
◽  
O.R. Bakieva ◽  
F.Z. Gilmutdinov ◽  
А.А. Kolotov ◽  
...  
Keyword(s):  
Electrochemical Behavior ◽  
Oxygen Implantation ◽  
Effect Of Oxygen ◽  
Corrosion Electrochemical Behavior

Corrosion-electrochemical behavior of β-W based CVD coatings in NaCl solution

2019 ◽  
pp. 29-32
Author(s):  
V.V. Dushik ◽  
◽  
G.V. Redkina ◽  
N.V. Rozhanskii ◽  
T.V. Rybkina ◽  
...  
Keyword(s):  
Electrochemical Behavior ◽  
Nacl Solution ◽  
Corrosion Electrochemical Behavior

Effect of oxygen implantation on the characteristic of Ge2Sb2Te5 phase change film

2004 ◽  
Author(s):  
Bo Liu ◽  
Zhitang Song ◽  
Ting Zhang ◽  
Songlin Feng ◽  
Bomy Chen
Keyword(s):  
Phase Change ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Implantation on the Electrochemical Properties of Iron Surface Layers.

1992 ◽  
Vol 43 (12) ◽  
pp. 1146-1150
Author(s):  
Takanobu FUJIHANA ◽  
Yoshio OKABE ◽  
Katsuo TAKAHASHI ◽  
Masaya IWAKI
Keyword(s):  
Electrochemical Properties ◽  
Iron Surface ◽  
Surface Layers ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

Corrosion electrochemical behavior of cadmium-plated 4340 steel in aircraft landing gears under thin electrolyte layers of potassium acetate deicing fluid

2019 ◽  
Vol 43 (36) ◽  
pp. 14435-14442
Author(s):  
Xiuzhou Lin ◽  
Runhua Zhang ◽  
Yongjun Mei ◽  
Li Yang ◽  
Feng Yang ◽  
...  
Keyword(s):  
Corrosion Behavior ◽  
Electrochemical Behavior ◽  
Potassium Acetate ◽  
Aircraft Landing ◽  
4340 Steel ◽  
Deicing Fluid ◽  
Landing Gears ◽  
Corrosion Electrochemical Behavior

We present a study of the corrosion behavior of cadmium-plated 4340 steel in aircraft landing gears under thin electrolyte layers of potassium acetate deicing fluid.

Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process

1989 ◽  
Vol 157 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
R.F. Pinizzotto ◽  
H. Yang
Keyword(s):  
Low Dose ◽  
Layer Formation ◽  
Reduced Dose ◽  
Oxygen Implantation ◽  
Implantation Temperature ◽  
Implantation Process ◽  
Effect Of Oxygen ◽  
Radiation Hard ◽  
Dose Step ◽  
Multiple Step

ABSTRACTWe have studied the effect of implantation temperature, dose step, and total dose on the buried Si02 layer formed with a multiple low dose oxygen implantation process. Furthermore, we have produced a continuous, high quality buried SiO2 layer about 1500 Å thick with a dose of only 7 × 1017 0+/cm2 at 160 keV. The thin SiO2 layer is important not only because of the possible economic advantages of reduced dose, but also because a thinner oxide layer is more radiation hard.

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