Study of Single-Electron Spectrum of GaAs/AlGaAs Heterostructure for Mid-IR Photodetectors via Low-Temperature Luminescence

2020 ◽  
Vol 47 (4) ◽  
pp. 105-109
Author(s):  
D. A. Litvinov ◽  
D. A. Pashkeev ◽  
L. N. Grigoreva ◽  
S. A. Kolosov ◽  
D. F. Aminev
Keyword(s):  
Low Temperature ◽  
Electron Spectrum ◽  
Single Electron ◽  
Ir Photodetectors

scholarly journals Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope

2011 ◽  
Vol 50 (8) ◽  
pp. 08LB10 ◽  
Author(s):  
Miftahul Anwar ◽  
Yuya Kawai ◽  
Daniel Moraru ◽  
Roland Nowak ◽  
Ryszard Jablonski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Electron ◽  
Kelvin Probe

Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

2008 ◽  
Vol 1145 ◽  
Author(s):  
Michiharu Tabe ◽  
Zainal Arif Burhanudin ◽  
Ratno Nuryadi ◽  
Daniel Moraru ◽  
Maciej Ligowski ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Low Temperature ◽  
Selective Oxidation ◽  
Kelvin Probe Force Microscopy ◽  
Single Electron ◽  
Single Electron Transfer ◽  
Kelvin Probe ◽  
Photon Detection ◽  
Force Microscopy ◽  
Channel Region

AbstractWe have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.

The Influence of Interfacial Effects on the Electron Spectrum of GaAs/AlGaAs Structures Used for the Creation of Mid-IR Photodetectors

2020 ◽  
Vol 46 (3) ◽  
pp. 256-259
Author(s):  
V. S. Krivobok ◽  
D. A. Pashkeev ◽  
D. A. Litvinov ◽  
L. N. Grigor’eva ◽  
S. A. Kolosov
Keyword(s):  
Electron Spectrum ◽  
Interfacial Effects ◽  
Ir Photodetectors ◽  
The Creation

scholarly journals Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

2002 ◽  
Vol 80 (15) ◽  
pp. 2797-2799 ◽  
Author(s):  
J. Motohisa ◽  
F. Nakajima ◽  
T. Fukui ◽  
W. G. van der Wiel ◽  
J. M. Elzerman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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