Single-Channel Region-Based Speller for Controlling Home Appliances

The brain-computer interface (BCI) system uses electroencephalography (EEG) signals for correspondence between the human and the outside world. This BCI communication system does not require any muscle action; hence, it can be controlled with the help of brain activities only. Therefore, this kind of system is helpful for patients, who are completely paralyzed or suffering from diseases like ALS (Amyotrophic Lateral Sclerosis), and spinal cord injury, etc., but having a normal functioning brain. A region-based P300 speller system for controlling home electronic appliances is proposed in this article. With the help of the proposed system, users can control and use appliances like an electronic door, fan, light, system, etc., without carrying out any physical movement. The experiments are conducted for five, ten, and fifteen trails for each subject. Among all classifiers, the ANN classifier provides the best off-line experiment accuracy of the order of 80% for fifteen flashes. Moreover, for the control translation, the Arduino module is also designed which is low cost and low power-based and physically controlled a device.

Π-Shape Silicon Window for Controlling OFF-Current in Junctionless SOI MOSFET

in this paper a modified junctionless transistor is proposed. The aim of the novel structure is controlling off-current using π-shape silicon window in the buried oxide under the source and the channel regions. The π-shape window changes the potential profile in the channel region in which the conduction band energy get away from the body Fermi energy and rebuild an electrostatic potential. Beside the significant reduced off-current, on current has acceptable value in the novel Silicon Region Junctionless MOSFET (SR-JMOSFET) than Conventional Junctionless MOSFET (C-JMOSFET). Moreover, replacing silicon material instead of silicon dioxide in the buried oxide causes reduced maximum temperature in the channel region. In this situation the heat could transfer to the π-shape silicon window and the temperature reduces in the active region, significantly.The simulation with the two-dimensional ATLAS simulator shows that short channel effects such as subthreshold and DIBL are controlled effectively in the SR-JMOSFET. Also, the optimum values of length and thickness of the π-shape window are defined to obtain the best behavior of the device.

Fishing Effort and Associated Catch per Unit Effort for Small-Scale Fisheries in the Mozambique Channel Region: 1950–2016

The Mozambique Channel region in East Africa has diverse marine ecosystems and serves as a migratory corridor for economically important species. Local and foreign industrial fisheries operate in the Mozambique Channel, but regional small-scale fisheries are the crucially important fisheries that provide food security, livelihoods, and economic opportunities for rural coastal communities. This study reconstructed and investigated trends in the fishing effort and catch per unit effort (CPUE) of small-scale marine fisheries in four Exclusive Economic Zones (EEZ) that constitute the Mozambique Channel, i.e., Union of Comoros, Madagascar, Mayotte, and Mozambique, from 1950 to 2016. Effective fishing effort for small-scale fisheries in the form of fishing capacity in kWdays (i.e., kilowatt days) was derived using the number, length, motorization (engine power) by fishing vessels, as well as an approximate human-powered equivalent for shore-based fishers without vessels, as well as days of fishing per year. Effective small-scale fishing effort in the Mozambique Channel increased by nearly 60 times from just over 386,000 kWdays in 1950 to over 23 million kWdays in 2016. Correspondingly, the overall small-scale CPUE, based on previously and independently reconstructed catch data declined by 91% in the region as a whole, from just under 175 kg⋅kWday–1 in the early 1950s to just over 15 kg⋅kWday–1 in recent years. All four EEZs showed the strongest declines in the small-scale CPUE in the earlier decades, driven by motorization and growth in vessel numbers impacting effective fishing effort. Increased motorization combined with a substantial growth in overall vessel numbers were the drivers of the increasing fishing effort and decreasing CPUE, and clearly suggest that continuing to increase the fishing capacity of small-scale fisheries in the absence of effective and restrictive management actions may exacerbate overexploitation risk.

Electrostatic Characteristics of High-k Stacked Gate-All-Around Heterojunction Tunnel Field Effect Transistor using Superposition Principle

We use superposition method to model the electrostatic characteristics of high-k stacked Gate-All-Around Hetero Junction TFETs (GAA-HJTFETs). The hetero junction is set up by using Ge/Si material in the source/channel respectively. The modeling is accomplished by considering the space charge regions at the source-channel/drainchannel junctions and the channel region. The surface potential in the channel region is obtained by applying superposition principle, where as in source/drain it is derived by solving 2-D/1-D Poisson's equation respectively. Furthermore, the electric field and drain current are modeled from the surface potential and Kane model respectively. The results are confirmed using ATLAS TCAD simulation.

Effect of Electrode Materials on the Electrical Characteristics of Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors

In this study, we investigated the effect of electrode materials on the electrical characteristics of coplanar top-gate a-ITGZO thin-film transistors, in which the gate, source, and drain electrodes were made of the same metal, Ti or Al. The field-effect mobilities of the a-ITGZO thin-film transistors with Ti and Al electrodes were 35.2 and 20.1 cm2/V·s, respectively, and the threshold voltage of the a-ITGZO thin-film transistor with Ti electrodes was −0.4 V, whereas that of the transistor with Al electrodes was −1.8; this shift is attributed to the fact that Ti has a higher work function than Al. When Ti was used as the source and drain electrode material, the channel resistance and effective channel length were reduced owing to the penetration of metal atoms into the channel region from the edge of the source/drain electrodes.

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated.