Low temperature growth of GaN single crystal films using ECR plasma excited metalorganic vapor phase epitaxy.
1986 ◽
Vol 77
(1-3)
◽
pp. 250-256
◽
1996 ◽
Vol 35
(Part 2, No. 7B)
◽
pp. L930-L932
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1995 ◽
Vol 24
(9)
◽
pp. 1093-1097
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2004 ◽
Vol 43
(No. 7B)
◽
pp. L944-L946
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1995 ◽
Vol 146
(1-4)
◽
pp. 462-466
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2009 ◽
Vol 165
◽
pp. 012024
◽