Epitaxial growth of CsPbBr3/PbS single-crystal film heterostructures for photodetection

Epitaxial high-crystallization film semiconductor heterostructures has been proved to be an effective method to prepare single-crystal films for different functional devices in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as building blocks for heterostructures. Here, the conformal vapor phase epitaxy of CsPbBr3 on PbS single-crystal films is realized to form the CsPbBr3/PbS heterostructures via a two-step vapor deposition process. The structural characterization reveals that PbS substrates and the epilayer CsPbBr3 have clear relationships: CsPbBr3(110) // PbS(100), CsPbBr3[ ] // PbS[001] and CsPbBr3[001] // PbS[010]. The absorption and photoluminescence (PL) characteristics of CsPbBr3/PbS heterostructures show the broadband light absorption and efficient photogenerated carrier transfer. Photodetectors based on the heterostructures show superior photoresponsivity of 15 A/W, high detectivity of 2.65 × 1011 Jones, fast response speed of 96 ms and obvious rectification behavior. Our study offers a convenient method for establishing the high-quality CsPbBr3/PbS single-crystal film heterostructures and providing an effective way for their application in optoelectronic devices.

Solution-Processed Epitaxial Growth of MAPbI3 Single-Crystal Films for Highly Stable Photodetectors

Recent years, organic-inorganic hybrid perovskites (OIHPs) have been widely used in applications, such as solar cells, lasers, light-emission diodes, and photodetectors due to their outstanding optoelectronic properties. Nowadays photodetectors based on perovskite films (PFs) suffer from surface and interface traps, which result from low crystalline quality of perovskite films and lattice mismatch between perovskite films and substrates. Herein, we fabricate MAPbI3 -(MA = CH3NH3) single-crystal films (SCFs) on MAPbBr3 single crystal substrates in MAPbI3 precursor solution during crystallization process via solution-processed epitaxy. Benefit from the good lattice matching, epitaxial MAPbI3 SCFs with high crystallinity and smooth morphology are of comparable quality to MAPbI3 PSCs and are of better quality than MAPbI3 polycrystalline films. Here we report that epitaxial MAPbI3 SCFs have a low trap density of 5.64×1011 cm–3 and a long carrier lifetime of 11.86 μs. In this work, photodetector based on epitaxial MAPbI3 single-crystal film (SCF) exhibits an excellent stability of a long-term stable response after 120 days, a fast response time of 2.21 μs, a high responsivity of 1.2 A W–1 and a high detectivity of 3.07 ×1012 jones.

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.

Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

Using experimental data, as well as using theoretical calculations, the results of studies of the composition of melt solutions (Sn + Ge + Si, Ga + Ge + Si) from temperature conditions are presented. Single-crystal films of a graded-gap solid solution Si1-xGex (0<x<1) on Si <111> substrates were obtained by liquid-phase epitaxy from a limited tin, gallium solution-melt. Optimal technological growth modes are found for obtaining crystalline perfect epitaxial layers and structures.

Organic Molecule Assisted Growth of Perovskite Films Consisting of Square Grains by Surface-Confined Process

Organic–inorganic perovskite single crystals are promising in the field of optoelectronics due to their excellent optoelectronic properties. However, the ion transport of perovskite precursor is poor in confined spaces, which results in difficulty in the preparation of perovskite single-crystal films. Herein, MAPbBr3 films consisting of square grains were fabricated by the surface-confined process using the organic molecule PEAI (phenethylammonium iodide). Under the effect of oversaturation gradient, PEA+ is combined with the surface of perovskite grain from top to side, which constrains the lateral growth of grains and induces a downward growth of perovskite, leading to the formation of square grains. With the improvement of concentration PEAI, the perovskite film exhibits a decreased side length of grains (from 0.98 to 12.96 μm) and increased grain number and coverage, as well as crystallinity. The perovskite single crystalline grain films with PEAI showed double photoluminescence (PL) emission peaks due to the existence of iodine-rich perovskite. This work may provide a practical way to fabricate high-quality perovskite films for perovskite photoelectronic devices.

Vapor-liquid-solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with Pt-Si alloy flux and X-ray topography analysis of its dislocation propagation behaviors

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...