Coulomb gap and metal–insulator transitions in doped semiconductors

1998 ◽  
Vol 168 (07) ◽  
pp. 804-808 ◽  
Author(s):  
Andrei G. Zabrodskii
Keyword(s):  
Doped Semiconductors ◽  
Metal Insulator ◽  
Coulomb Gap

HOPPING CONDUCTION AT VERY LOW TEMPERATURES: SOME NEW RESULTS ON AN OLD PROBLEM

1993 ◽  
Vol 07 (05) ◽  
pp. 265-269
Author(s):  
PEIHUA DAI ◽  
YOUZHU ZHANG ◽  
M. P. SARACHIK
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Low Temperatures ◽  
Zero Magnetic Field ◽  
Strong Temperature Dependence ◽  
Hopping Conduction ◽  
Doped Semiconductors ◽  
Metal Insulator ◽  
Coulomb Gap

We briefly review the temperature dependence of hopping conduction in doped semiconductors near the metal-insulator transition, with emphasis on recent experimental results in Si:B at very low temperatures. Our main finding is that at sufficiently low temperature the conduction is simply activated in zero magnetic field, indicating the presence of a "hard" gap in the density of states. A magnetic field suppresses this unexpectedly strong temperature dependence, changing it to the variable-range-hopping form expected for a "soft" Coulomb gap. This suggests that the density of states is determined by electron correlations due to exchange as well as charge.

Coulomb Gap and Metal–Insulator–Semiconductor (MIS) Transition in ZnO/n-Ag/ZnO Film in the Plasmonic Domain

Plasmonics ◽  
2015 ◽  
Vol 10 (6) ◽  
pp. 1291-1300 ◽  
Author(s):  
R. Bhunia ◽  
N. Bhadra ◽  
S. Das ◽  
S. Hussain ◽  
B. R. Chakraborty ◽  
...  
Keyword(s):  
Zno Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Coulomb Gap
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