metal insulator semiconductor
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Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

2022 ◽  
Vol 120 (2) ◽  
pp. 023102
Author(s):  
HoHyun Im ◽  
Geonyeop Lee ◽  
Hyunik Park ◽  
Dongryul Lee ◽  
Jihyun Kim
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Charge Transfer Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage

IMPLEMENTATION OF THE TWO-FREQUENCY METHOD FOR MEASURING THE DERIVATIVE OF CAPACITANCE-VOLTAGE CHARACTERISTIC

2021 ◽  
pp. 44-51
Author(s):  
N. I. Lysenko ◽  
V. G. Polovinkin
Keyword(s):  
Numerical Differentiation ◽  
Voltage Characteristic ◽  
Semiconductor Structure ◽  
Measuring System ◽  
Frequency Method ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
Silicon Based ◽  
Derivatives Of

The article presents an example of the implementation of the two-frequency method for measuring the derivative of the capacitance-voltage characteristic. The authors describe the diagram of the measuring system and the software package for the measurement process control. The article also gives the results of measurements of the capacitance-voltage characteristic and its derivative of the silicon-based metal-insulator-semiconductor structure. The qualitative differences between the derivatives of the capacitive characteristics of the metal-insulator-semiconductor structure were obtained as a result of numerical differentiation and its direct measurement by the two-frequency method. The authors offer an explanation for this difference.

scholarly journals Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode

2021 ◽  
Vol 130 (24) ◽  
pp. 245701
Author(s):  
Prabhans Tiwari ◽  
Jayeeta Biswas ◽  
Chandan Joishi ◽  
Saurabh Lodha
Keyword(s):  
Electric Field ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Mis Diode

A Poisson‐Nernst‐Planck Model of Ion Transport and Interface Segregation in Metal‐Insulator‐ Semiconductor Structures and Solar Cells

2021 ◽  
Author(s):  
Erick Rolando. Martinez Loran ◽  
Guillaume von Gastrow ◽  
Jacob Clenney ◽  
Flavio Fernando Contreras-Torres ◽  
Rico Meier ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Transport ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Interface Segregation

Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

2021 ◽  
Vol 42 (12) ◽  
pp. 1786-1789
Author(s):  
Chen Sun ◽  
Zijie Zheng ◽  
Kaizhen Han ◽  
Subhranu Samanta ◽  
Jiuren Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ferroelectric Thin Film ◽  
Semiconductor Structure ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Investigation of the Intrinsic Nature of Organic Semiconductors Using a Metal Contact-Induced Capacitance Study in Organic Metal–Insulator–Semiconductor Capacitors

2021 ◽  
Author(s):  
Navdeep Singh Gandhi ◽  
Rajdeep Dhar ◽  
Fiheon Imroze ◽  
Mithun Chennamkulam Ajith ◽  
Prashanth Kumar Manda ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Metal Contact ◽  
Organic Metal ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Intrinsic Nature

Enhancing Photovoltage of Metal-Insulator-Semiconductor (MIS) Photoanode By Coordination Polymer Via Facile Chemical Deposition

2021 ◽  
Vol MA2021-02 (43) ◽  
pp. 1314-1314
Author(s):  
Ponart Aroonratsameruang ◽  
Gabriel Loget ◽  
Pichaya Pattanasattayavong
Keyword(s):  
Coordination Polymer ◽  
Chemical Deposition ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation

2021 ◽  
Author(s):  
Prangya P. Sahoo ◽  
Miroslav Mikolášek ◽  
Kristína Hušeková ◽  
Edmund Dobročka ◽  
Ján Šoltýs ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Photoelectrochemical Water Oxidation

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

2021 ◽  
Vol 119 (14) ◽  
pp. 143503
Author(s):  
Trung Huu Nguyen ◽  
Tokio Takahashi ◽  
Hiroshi Chonan ◽  
Hoang Van Nguyen ◽  
Hisashi Yamada ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Electron Mobility Transistors
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