The article presents an example of the implementation of the two-frequency method for measuring the derivative of the capacitance-voltage characteristic. The authors describe the diagram of the measuring system and the software package for the measurement process control. The article also gives the results of measurements of the capacitance-voltage characteristic and its derivative of the silicon-based metal-insulator-semiconductor structure. The qualitative differences between the derivatives of the capacitive characteristics of the metal-insulator-semiconductor structure were obtained as a result of numerical differentiation and its direct measurement by the two-frequency method. The authors offer an explanation for this difference.
Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode