scholarly journals A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

2018 ◽  
Vol 8 (2) ◽  
pp. 16
Author(s):  
Seongjong Kim ◽  
Mingoo Seok
Keyword(s):  
Thermal Sensor ◽  
Standard Cell ◽  
Thermal Monitoring ◽  
On Chip

scholarly journals Near-Optimal Thermal Monitoring Framework for Many-Core Systems-on-Chip

2015 ◽  
Vol 64 (11) ◽  
pp. 3197-3209 ◽  
Author(s):  
Juri Ranieri ◽  
Alessandro Vincenzi ◽  
Amina Chebira ◽  
David Atienza ◽  
Martin Vetterli
Keyword(s):  
Thermal Monitoring ◽  
Systems On Chip ◽  
Monitoring Framework ◽  
On Chip ◽  
Many Core

A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process

2018 ◽  
Author(s):  
Mitsuhiko Igarashi ◽  
Yuuki Uchida ◽  
Yoshio Takazawa ◽  
Yasumasa Tsukamoto ◽  
Koji Shibutani ◽  
...  
Keyword(s):  
Standard Cell ◽  
On Chip

All-digital SoC thermal sensor using on-chip high order temperature curvature correction

2015 ◽  
Author(s):  
Mehdi Saligane ◽  
Mahmood Khayatzadeh ◽  
Yiqun Zhang ◽  
Seokhyeon Jeong ◽  
David Blaauw ◽  
...  
Keyword(s):  
High Order ◽  
Thermal Sensor ◽  
Curvature Correction ◽  
On Chip

Detection of Thermal Transport on Chip Using Gate-Induced Drain Leakage Current

2020 ◽  
Vol 20 (8) ◽  
pp. 4980-4984
Author(s):  
Nak Won Yoo ◽  
Seoungwook Choi ◽  
Jun Yeon Yun ◽  
Young June Park
Keyword(s):  
Heat Capacity ◽  
Thermal Properties ◽  
Leakage Current ◽  
Thermal Transport ◽  
Thermal Response ◽  
Wave Form ◽  
Thermal Sensor ◽  
Sinusoidal Wave ◽  
On Chip ◽  
Small Overlap

In this paper, we propose a method to detect thermal transport suitable in nanometers scale. It is feasible using the GIDL-biased MOSFET as thermal sensor. It is because the GIDL current is occurred due to the band-to-band tunnelling of the electron in a small overlap region between gate and drain. Using the relation between the thermal transport and the thermal properties (the heat resistivity and heat capacity), we conducted two ways to heat up. By generating heat in the step and sinusoidal wave form with a transistor and observing the response at other place, we were able to estimate the speed of heat on the chip. The thermal response is measured by the GIDL current of another MOSFET. The speed of the heat generated at the MOSFET is measured about 2.12 m/s.

Sign in / Sign up

Export Citation Format

Share Document