All-digital SoC thermal sensor using on-chip high order temperature curvature correction

Author(s):  
Mehdi Saligane ◽  
Mahmood Khayatzadeh ◽  
Yiqun Zhang ◽  
Seokhyeon Jeong ◽  
David Blaauw ◽  
...  
2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Hanzhe Liu ◽  
Giulio Vampa ◽  
Jingyuan Linda Zhang ◽  
Yu Shi ◽  
Siddharth Buddhiraju ◽  
...  

Abstract Since the new millennium coherent extreme ultra-violet and soft x-ray radiation has revolutionized the understanding of dynamical physical, chemical and biological systems at the electron’s natural timescale. Unfortunately, coherent laser-based upconversion of infrared photons to vacuum-ultraviolet and soft x-ray high-order harmonics in gaseous, liquid and solid targets is notoriously inefficient. In dense nonlinear media, the limiting factor is strong re-absorption of the generated high-energy photons. Here we overcome this limitation by generating high-order harmonics from a periodic array of thin one-dimensional crystalline silicon ridge waveguides. Adding vacuum gaps between the ridges avoids the high absorption loss of the bulk and results in a ~ 100-fold increase of the extraction depth. As the grating period is varied, each high harmonic shows a different and marked modulation, indicating their waveguiding in the vacuum slots with reduced absorption. Looking ahead, our results enable bright on-chip coherent short-wavelength sources and may extend the usable spectral range of traditional nonlinear crystals to their absorption windows. Potential applications include on-chip chemically-sensitive spectro-nanoscopy.


2020 ◽  
Vol 20 (8) ◽  
pp. 4980-4984
Author(s):  
Nak Won Yoo ◽  
Seoungwook Choi ◽  
Jun Yeon Yun ◽  
Young June Park

In this paper, we propose a method to detect thermal transport suitable in nanometers scale. It is feasible using the GIDL-biased MOSFET as thermal sensor. It is because the GIDL current is occurred due to the band-to-band tunnelling of the electron in a small overlap region between gate and drain. Using the relation between the thermal transport and the thermal properties (the heat resistivity and heat capacity), we conducted two ways to heat up. By generating heat in the step and sinusoidal wave form with a transistor and observing the response at other place, we were able to estimate the speed of heat on the chip. The thermal response is measured by the GIDL current of another MOSFET. The speed of the heat generated at the MOSFET is measured about 2.12 m/s.


2017 ◽  
Vol 42 (13) ◽  
pp. 2463 ◽  
Author(s):  
Yongmei Wang ◽  
Xinyuan Fang ◽  
Zeyu Kuang ◽  
Huijun Wang ◽  
Dunzhao Wei ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document