On Incipient Plasticity of InP Crystal: A Molecular Dynamics Study
Keyword(s):
With classical molecular dynamics simulations, we demonstrated that doping of the InP crystal with Zn and S atoms reduces the pressure of the B3→B1 phase transformation as well as inhibits the development of a dislocation structure. On this basis, we propose a method for determining the phenomenon that initiates nanoscale plasticity in semiconductors. When applied to the outcomes of nanoindentation experiments, it predicts the dislocation origin of the elastic-plastic transition in InP crystal and the phase transformation origin of GaAs incipient plasticity.
2016 ◽
Vol 16
(14)
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pp. 1112-1124
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2000 ◽
Vol 89
(2)
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pp. 190-200
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2014 ◽
Vol 16
(39)
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pp. 21135-21143
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2019 ◽
Vol 159
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pp. 73-85
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2008 ◽
Vol 112
(2)
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pp. 313-320
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2008 ◽
Vol 121
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pp. 321-326
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1993 ◽
Vol 19
(1-2)
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pp. 165-171
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