Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes

Author(s):  
Jimy Encomendero ◽  
Vladimir Protasenko ◽  
Debdeep Jena ◽  
Huili G. Xing
2013 ◽  
Vol 2 (3) ◽  
pp. 241-245 ◽  
Author(s):  
Bahniman Ghosh ◽  
Sourav Shah ◽  
Akshaykumar Salimath

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes

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