Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer

2019 ◽  
Vol 39 (5) ◽  
pp. 0523003
Author(s):  
张文静 Zhang Wenjing ◽  
张芹 Zhang Qin ◽  
杨亮 Yang Liang ◽  
江莹 Jiang Ying ◽  
常春 Chang Chun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Charge Balance ◽  
Electron Blocking Layer ◽  
Light Emitting

scholarly journals Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers

RSC Advances ◽  
2019 ◽  
Vol 9 (21) ◽  
pp. 11634-11640 ◽  
Author(s):  
Hoseok Jin ◽  
Hyungseok Moon ◽  
Woosuk Lee ◽  
Hyeok Hwangbo ◽  
Sang Heon Yong ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Aluminum Oxide ◽  
Light Emitting Diodes ◽  
Balance Control ◽  
Atomic Layer ◽  
Blocking Layer ◽  
Charge Balance ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Charge Imbalance

We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs).

Highly Efficient Quantum-Dot Light-Emitting Diodes with DNA−CTMA as a Combined Hole-Transporting and Electron-Blocking Layer

ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 737-743 ◽  
Author(s):  
Qingjiang Sun ◽  
Guru Subramanyam ◽  
Liming Dai ◽  
Michael Check ◽  
Angela Campbell ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hole Transporting
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