270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers
2017 ◽
Vol 214
(11)
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pp. 1700461
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2002 ◽
Vol 8
(2)
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pp. 302-309
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2014 ◽
Vol 62
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pp. 55-58
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2015 ◽
Vol 82
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pp. 151-157
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2017 ◽
Vol 104
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pp. 240-246
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2018 ◽
Vol 118
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pp. 55-60
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