270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers

2017 ◽  
Vol 38 (1) ◽  
pp. 57-62
Author(s):  
王福学 WANG Fu-xue ◽  
叶煊超 YE Xuan-chao
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