Improving Performance of Algan-Based Deep-Ultraviolet Light-Emitting Diodes by Inserting a Higher Al-Content Algan Layer Within the Multiple Quantum Wells

2017 ◽  
Vol 214 (11) ◽  
pp. 1700461 ◽  
Author(s):  
Lin Lu ◽  
Zhi Wan ◽  
Fu Jun Xu ◽  
Bo Shen ◽  
Chen Lv ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Algan Layer ◽  
Light Emitting ◽  
Al Content ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

2002 ◽  
Vol 8 (2) ◽  
pp. 302-309 ◽  
Author(s):  
M. Shatalov ◽  
J. Zhang ◽  
A.S. Chitnis ◽  
V. Adivarahan ◽  
J. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L921-L924 ◽  
Author(s):  
Jian Ping Zhang ◽  
Vinod Adivarahan ◽  
Hong Mei Wang ◽  
Qhalid Fareed ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

2009 ◽  
Vol 2 (9) ◽  
pp. 092102 ◽  
Author(s):  
Vinod Adivarahan ◽  
Ahmad Heidari ◽  
Bin Zhang ◽  
Qhalid Fareed ◽  
Monirul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Region ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Vertical Injection ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

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