Structural, Optical, and Electrical Properties of Transparent Conductive In2O3-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

2007 ◽  
Vol 50 (3) ◽  
pp. 626 ◽  
Author(s):  
F. K. ◽  
G. X ◽  
W. J. ◽  
B. C. ◽  
Y. C.
2008 ◽  
Vol 53 (3) ◽  
pp. 1655-1659 ◽  
Author(s):  
Byeong Eog Jun ◽  
Yu Sung Kim ◽  
Byung Kee Moon ◽  
Byung Chun Choi ◽  
Jung Hyun Jeong ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 339-342
Author(s):  
Gun Hee Kim ◽  
Hong Seong Kang ◽  
Dong Lim Kim ◽  
Hyun Woo Chang ◽  
Byung Du Ahn ◽  
...  

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.


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