AbstractThe growth of InAs on GaAs self assembled quantum dots and their electronic properties is studied. The limit for coherent island growth is calculated with a simple model and compared to the experimentally observed values. Cross section transmission electron micrography and atomic force micrography are used to investigate this limit. The electronic properties studies involved the use of capacitance spectroscopy to map out the density of states in these structures as well as to probe the temperature dependence of the Coulomb Blockade effect in this system. It was found that Coulomb Blockade could be observed at temperatures in excess of 77K, representing an attractive approach for single electronics operating at high temperatures.
Erratum to: Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots
