Nonlinear optical properties of silicon nanocrystals grown by a SiOx/SiO2 superlattice approach

2010 ◽  
Vol 56 (4(1)) ◽  
pp. 1303-1306
Author(s):  
Rong-Jun Zhang
2002 ◽  
Vol 722 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  

AbstractWe present a systematic study on the nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapour deposition (PECVD). The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ(3) of Si-nc are measured by Z-scan method. While the closed aperture Z-scan reveals a sign of positive nonlinearity, the open aperture measurements suggests a nonlinear absorption coefficients. Absolute values of χ(3) are in the order of 10-9 esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects.


2002 ◽  
Vol 91 (7) ◽  
pp. 4607-4610 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  

2006 ◽  
Vol 958 ◽  
Author(s):  
Rita Spano ◽  
Massimo Cazzanelli ◽  
Nicola Daldosso ◽  
Zeno Gaburro ◽  
Luigi Ferraioli ◽  
...  

ABSTRACTA systematic study of nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapor deposition (PECVD) is reported. Nonlinear optical refraction and absorption have been measured by z-scan technique at three different time regimes and at different wavelengths to investigate both the thermal and electronic responses. For this purpose three different laser sources have been used. Different behaviors, as expected from the theory, for different pump pulse durations are observed.


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