Electronic states and interband transitions of strained In z Ga x Al1−z−x P/In0.5Al0.5P multiple quantum wells

2012 ◽  
Vol 61 (10) ◽  
pp. 1724-1727
Author(s):  
D. H. Kim ◽  
J. H. You ◽  
T. W. Kim ◽  
J. D. Song ◽  
K. H. Yoo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic States ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation‐doped heterojunctions

1985 ◽  
Vol 46 (10) ◽  
pp. 970-972 ◽  
Author(s):  
O. J. Glembocki ◽  
B. V. Shanabrook ◽  
N. Bottka ◽  
W. T. Beard ◽  
J. Comas
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Interband transitions in InAsxP1−x/InP strained multiple quantum wells

1992 ◽  
Vol 72 (4) ◽  
pp. 1645-1647 ◽  
Author(s):  
S. J. Hwang ◽  
W. Shan ◽  
J. J. Song ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Lattice Matched

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells

1989 ◽  
Vol 5 (4) ◽  
pp. 591-594 ◽  
Author(s):  
H. Shen ◽  
Z. Hang ◽  
Jing Leng ◽  
Fred H. Pollak ◽  
L.L. Chang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Photovoltaic investigations of interband transitions in SiGe/Si multiple quantum wells

1995 ◽  
Vol 66 (14) ◽  
pp. 1782-1784 ◽  
Author(s):  
Jianbao Wang ◽  
Dawei Gong ◽  
Fang Lu ◽  
Henghui Sun ◽  
Xun Wang
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

2012 ◽  
Vol 100 (4) ◽  
pp. 041905 ◽  
Author(s):  
H. P. Hsu ◽  
P. H. Wu ◽  
Y. S. Huang ◽  
D. Chrastina ◽  
G. Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions
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