Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

2007 ◽  
pp. 25-28
Author(s):  
Jung Gon Kim ◽  
Joon Ho An ◽  
Jung Doo Seo ◽  
Jung Kyu Kim ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Hydrogen Effect ◽  
Transport Method ◽  
Vapor Transport Method

scholarly journals Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method

2019 ◽  
Vol 216 (16) ◽  
pp. 1970052 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

2007 ◽  
Vol 556-557 ◽  
pp. 25-28 ◽  
Author(s):  
Jung Gon Kim ◽  
Joon Ho An ◽  
Jung Doo Seo ◽  
Jung Kyu Kim ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Single Crystal ◽  
Carrier Concentration ◽  
Growth Process ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Hydrogen Effect ◽  
Hydrogen Addition ◽  
Bulk Growth ◽  
Transport Method ◽  
Concentration Levels

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate.

Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method

2019 ◽  
Vol 216 (16) ◽  
pp. 1900118 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Development of bulk SiC single crystal grown by physical vapor transport method

2003 ◽  
Vol 23 (1-2) ◽  
pp. 415-420 ◽  
Author(s):  
Rongjiang Han ◽  
Xiangang Xu ◽  
Xiaobo Hu ◽  
Naisen Yu ◽  
Jiyang Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Seed Polarity Dependence of SiC SingleCrystal Growth by Using a Physical Vapor Transport Method

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1834-1839 ◽  
Author(s):  
Jung-Gon Kim ◽  
Chang-Hyun Son ◽  
Jung-Woo Choi ◽  
Jung-Kyu Kim ◽  
Won-Jae Lee ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method
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