Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

2007 ◽  
Vol 556-557 ◽  
pp. 25-28 ◽  
Author(s):  
Jung Gon Kim ◽  
Joon Ho An ◽  
Jung Doo Seo ◽  
Jung Kyu Kim ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Single Crystal ◽  
Carrier Concentration ◽  
Growth Process ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Hydrogen Effect ◽  
Hydrogen Addition ◽  
Bulk Growth ◽  
Transport Method ◽  
Concentration Levels

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate.

An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

2007 ◽  
Vol 556-557 ◽  
pp. 9-12 ◽  
Author(s):  
Jung Doo Seo ◽  
Joon Ho An ◽  
Jung Gon Kim ◽  
Jung Kyu Kim ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Vapor Transport ◽  
Seed Surface ◽  
Bulk Growth ◽  
Seed Material ◽  
Transport Method

SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on new SiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

scholarly journals Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method

2019 ◽  
Vol 216 (16) ◽  
pp. 1970052 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method

2019 ◽  
Vol 216 (16) ◽  
pp. 1900118 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Development of bulk SiC single crystal grown by physical vapor transport method

2003 ◽  
Vol 23 (1-2) ◽  
pp. 415-420 ◽  
Author(s):  
Rongjiang Han ◽  
Xiangang Xu ◽  
Xiaobo Hu ◽  
Naisen Yu ◽  
Jiyang Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals

2001 ◽  
Vol 123 (6) ◽  
pp. 1098-1109 ◽  
Author(s):  
Q.-S. Chen ◽  
H. Zhang ◽  
V. Prasad ◽  
C. M. Balkas ◽  
N. K. Yushin
Keyword(s):  
Mass Transfer ◽  
Growth Rate ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Process Model ◽  
Crystal Surface ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Powder Charge ◽  
Bulk Growth

Wide-bandgap silicon carbide (SiC) substrates are needed for fabrication of electronic and optoelectronic devices and circuits that can function under high-temperature, high-power, high-frequency conditions. The bulk growth of SiC single crystal by physical vapor transport (PVT), modified Lely method involves sublimation of a SiC powder charge, mass transfer through an inert gas environment, and condensation on a seed. Temperature distribution in the growth system and growth rate profile on the crystal surface are critical to the quality and size of the grown SiC single crystal. Modeling of SiC growth is considered important for the design of efficient systems and reduction of defect density and micropipes in as-grown crystals. A comprehensive process model for SiC bulk growth has been developed that incorporates the calculations of radio frequency (RF) heating, heat and mass transfer and growth kinetics. The effects of current in the induction coil as well as that of coil position on thermal field and growth rate have been studied in detail. The growth rate has an Arrhenius-type dependence on deposition surface temperature and a linear dependence on the temperature gradient in the growth chamber.

Sign in / Sign up

Export Citation Format

Share Document