Recent Progress in Developing Magnetic Properties of Mn-Doped ZnO Diluted Magnetic Semiconductors

2012 ◽  
Vol 535-537 ◽  
pp. 1252-1257 ◽  
Author(s):  
Yu Zhang ◽  
Tong Li ◽  
Ya Xin Wang ◽  
Xin Wei Zhao

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as DMSs, has attracted much interest. Among DMSs, the system of Mn-doped ZnO is considered as the most promising candidates. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Mn DMSs.

2013 ◽  
Vol 652-654 ◽  
pp. 585-589 ◽  
Author(s):  
Tong Li ◽  
Qiong Jie ◽  
Yu Zhang ◽  
Ya Xin Wang ◽  
Xiao Chang Ni

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.


2008 ◽  
Vol 57 (7) ◽  
pp. 4539
Author(s):  
Yu Zhou ◽  
Li Xiang ◽  
Long Xue ◽  
Cheng Xing-Wang ◽  
Wang Jing-Yun ◽  
...  

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazunori Sato ◽  
Hiroshi Katayama-Yoshida

ABSTRACTWe propose a materials design to fabricate the transparent and half-metallic ferromagnets in V-, Cr-, Mn+hole, Fe-, Co-, and Ni-doped ZnO based upon ab initio electronic structure calculation. Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. The ferromagnetic state becomes more stable by electron doping in Fe-, Co- or Ni-doped ZnO. From the point of practical applications, it is feasible to realize the half-metallic ferromagnets with high Curie temperature, because n-type ZnO is easily available. We propose the design of new functional devices, such as spin-FET, photo-induced ferromagnets, and spin-injection devices using negative electron affinity in the wide band gap semiconductors.


2008 ◽  
Vol 17 (4) ◽  
pp. 1371-1376 ◽  
Author(s):  
Liu Xue-Chao ◽  
Zhang Hua-Wei ◽  
Zhang Tao ◽  
Chen Bo-Yuan ◽  
Chen Zhi-Zhan ◽  
...  

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