Cd1-xMgxS CQDs Thin Films for High Performance and Highly Selective NIR Photodetection

Development of high-performance and highly selective NIR photodetectors (PDs) using wide band gap semiconductors is a significant field of research in the present scenario. Herein, cost effective and easy to...

Phase control for indium oxide nanoparticles

The indium oxides, c-In2O3, h-In2O3, InOOH and In(OH)3, have been studied by in situ X-ray scattering to determine the formation and transformation mechanisms in this system of important wide band gap semiconductors.

Copper-doped quasi-one-dimensional ZnO for effective photooxidation of As (III) to As (V) in visible light

By temolysis of the Zn1− Cu (HCOO)(OCH2CH2O)1/2 complexes in one step Zn1− Cu O solid solutions were obtained. Сopper in these materials is a regulator of the photoactivity and morphology of aggregates. According to TEM, XPS, optical spectroscopy, and voltammetry, all samples studied contain monovalent copper. It was shown that the maximum photoactivity in the reactions of photooxidation of As in UV and blue light has Zn1− Cu O (0<x<0.1) solid solutions with tubular particle morphology. With an increase in concentration up to 10 at.%, сopper manifests itself as an electron acceptor, which reduces the efficiency of the catalyst in both light ranges. Keywords: photocatalyst, Cu-doped ZnO, heterostructures, wide-band-gap semiconductors, precursor synthesis