The Effect of SiC Content on Pressureless Sintered Si2ON2-SiC Ceramic

2012 ◽  
Vol 562-564 ◽  
pp. 27-30
Author(s):  
Zhu Xing Tang ◽  
Hui Hui Tan ◽  
He Zhang ◽  
Ke Zhou Xu ◽  
Ying Zhang
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Silicon Oxynitride ◽  
Pressureless Sintering ◽  
Silicon Carbide Ceramic ◽  
Ceramic Samples ◽  
Sic Ceramic ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Sintering Method

The Si¬2ON2-SiC ceramic was fabricated by pressureless sintering method. In this paper we researched the effect of SiC content (50%, 70% and 90%) on the performance of silicon oxynitride bonded silicon carbide ceramics. Through testing and analyzing the SEM, XRD, density and porosity of the final silicon oxynitride bonded silicon carbide ceramic samples, the results show that: changes in SiC content not only affect the bulk density of the composites but also affect the phase composition and the microstructure of fracture surface. The most compactness experimental product is sintered at1500°C containing 50wt% SiC.

Microwave Curing of Silicon Carbide Ceramics from a Polycarbosilane Precursor

1994 ◽  
Vol 347 ◽  
Author(s):  
Tzyy-Heng Alex Shan ◽  
Robert Cozzens
Keyword(s):  
Silicon Carbide ◽  
Thermal Processing ◽  
Ceramic Materials ◽  
Sole Source ◽  
Curing Temperature ◽  
Polymeric Precursor ◽  
Microwave Curing ◽  
Silicon Carbide Ceramic ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

ABSTRACTSilicon carbide ceramic materials have been successfully formed from commercially available polycarbosilane using microwave radiation as the sole source of heat. Conventional thermal processing of the same polymeric precursor was also studied for comparison with microwave processing. Microwave heating enhances crystallinity at much lower curing temperature and within shorter times. Possible explanations for microwave enhanced processing are proposed.

Gelcasting and pressureless sintering of silicon carbide ceramics using Al2O3–Y2O3 as the sintering additives

2013 ◽  
Vol 33 (10) ◽  
pp. 1695-1699 ◽  
Author(s):  
Jingxian Zhang ◽  
Dongliang Jiang ◽  
Qingling Lin ◽  
Zhongming Chen ◽  
Zhengren Huang
Keyword(s):  
Silicon Carbide ◽  
Pressureless Sintering ◽  
Sintering Additives ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Pressureless sintering of silicon carbide ceramics containing zirconium diboride

2011 ◽  
Vol 37 (6) ◽  
pp. 2031-2035 ◽  
Author(s):  
Hui Yang ◽  
Lingjie Zhang ◽  
Xingzhong Guo ◽  
Xiaoyi Zhu ◽  
Xiaojian Fu
Keyword(s):  
Silicon Carbide ◽  
Zirconium Diboride ◽  
Pressureless Sintering ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Properties and Manufacturing Method of Silicon Carbide Ceramic New Materials

2013 ◽  
Vol 416-417 ◽  
pp. 1693-1697 ◽  
Author(s):  
Bing Feng Liu
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Thermal Shock ◽  
High Temperature Strength ◽  
New Materials ◽  
Manufacturing Method ◽  
Silicon Carbide Ceramic ◽  
Process Characteristics ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Ceramic industry developed rapidly in recent years, a greater demand for new materials. SiC ceramics as one of candidate materials that a few suitable for use high-temperature structural parts, shows its unique advantages in the high temperature, thermal shock, corrosive and other harsh environments. Its high temperature performance and application potential has attracted people's attention, but its properties make it difficult sintering at atmospheric pressure, unable to meet the needs of industrial production. Pressure less sintering technology has become the key in its application promotion. As strong antioxidant activity, better abrasion resistance, hardness, thermal stability, high temperature strength, thermal expansion coefficient, thermal conductivity and thermal shock and great chemical resistance and other excellent characteristics, Silicon carbide ceramics are widely used in various fields. Based on the silicon carbide ceramic materialisms development process, characteristics, international research and proposed several status of sintering silicon carbide ceramic, and discuss its development trends.

Silicon carbide ceramics through temperature-induced gelation and pressureless sintering

2004 ◽  
Vol 382 (1-2) ◽  
pp. 335-340 ◽  
Author(s):  
X. Xu ◽  
S. Mei ◽  
J.M.F. Ferreira ◽  
T. Nishimura ◽  
N. Hirosaki
Keyword(s):  
Silicon Carbide ◽  
Pressureless Sintering ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics
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