Growth of Anatase TiO2 Thin Film for Photokilling of Bacteria by DC Reactive Magnetron Sputtering Technique

2013 ◽  
Vol 770 ◽  
pp. 173-176 ◽  
Author(s):  
Suree Tongwanichniyom ◽  
Wichian Siriprom ◽  
Dhonluck Manop ◽  
Adisorn Buranawong ◽  
Jakrapong Kaewkhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Uv Light ◽  
Grazing Incidence ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Force Microscopy ◽  
Dc Reactive Magnetron Sputtering

Titanium dioxide (TiO2) thin films have been deposited on Si-wafer and glass slide by DC reactive magnetron sputtering technique at different O2 gas flow rates. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD), surface morphology was analyzed by atomic force microscopy (AFM) and disinfection of surfaces by photo catalytic oxidation with TiO2 and UV light irradiation. The results showed that, from GIXRD results, all as-deposited TiO2 films have crystal structure of TiO2 corresponding to the A(101) and A(200). AFM results showed that the film thicknesses increase from 183 nm to 238 nm with increasing of O2 gas flow rate, while the film roughness was in range of 4.8 nm to 5.9 nm. The as-deposited anatase TiO2 thin film in this work can kill the bacteria when expose to the UV light.

Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow

2006 ◽  
Vol 200 (20-21) ◽  
pp. 6047-6053 ◽  
Author(s):  
E. Forniés ◽  
R. Escobar Galindo ◽  
O. Sánchez ◽  
J.M. Albella
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Ar Gas

Effect of Operated Pressure on Anticorrosive Behavior of Ta2O5 Thin Film Grown by D.C. Reactive Magnetron Sputtering System

2013 ◽  
Vol 802 ◽  
pp. 242-246 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Yossawat Rayanasukha ◽  
Darinee Phromyothin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Film Surface ◽  
Grazing Incidence ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering System

Tantalum oxide (Ta2O5) thin films, 100 nm thick were deposited by D.C. reactive magnetron sputtering system at different operated pressure on unheated p-type silicon (100) wafer and 304 stainless substrates. Their crystalline structure, film surface morphology and optical properties, as well as anticorrosive behavior, were investigated. The structure and morphology of films were characterized by grazing-incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The optical properties were determined by spectroscopic ellipsometry (SE). The corrosion performances of the films were investigated through potentiostat and immersion tests in 1 M NaCl solutions. The results showed that as-deposited Ta2O5 thin films were amorphous. The refractive index varied from 2.06 to 2.17 (at 550 nm) with increasing operated pressure. The corrosion rate of Ta2O5 thin film improves as the operated pressure decreases. The Ta2O5 thin films deposited at 3 mTorr operated pressure could be exhibited high performance anticorrosive behavior.

An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering

1996 ◽  
Vol 424 ◽  
Author(s):  
C. S. McCormick ◽  
C. E. Webe ◽  
J. R. Abelson
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Silicon Thin Film ◽  
Dc Reactive Magnetron Sputtering ◽  
Silicon Based

AbstractWe deposit hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125°C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/Ioff ratio of 5 × 105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

scholarly journals PHOTOCATALYTIC TIO THIN FILMS FABRICATED BY DC REACTIVE MAGNETRON SPUTTERING

2009 ◽  
Vol 12 (3) ◽  
pp. 16-23
Author(s):  
Thu Thi Hanh Vu ◽  
Chi Huu Nguyen ◽  
Hieu Van Le ◽  
Dat Thanh Huynh ◽  
Ngoc Kim Phan
Keyword(s):  
Thin Films ◽  
Methylene Blue ◽  
Magnetron Sputtering ◽  
Uv Light ◽  
Anatase Phase ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Vis Spectroscopy ◽  
Dc Reactive Magnetron Sputtering

Titanium dioxide thin films that were deposited by unbalanced DC reactive magnetron sputtering on glass substrates have a high crystal structure and large surfac especially getting the anatase phase at the fairly low temperature substrates T, = 446K . The films were charaterized by X-ray diffraction, attomic force AFM, UV-vis spectroscopy. The photocatalytic properties of TiO2 thin films were tested with the degradation methylene blue MB under UV light irradiation. The best fabricated photocatalytic TiOthin films were found with such parameters: gas ratio 0 Ar = 0,06; sputtering power P, = 275W (1p = 0,5 A; Vp = 550V); target - substrate distance h = 4cm; pressure p = 13 mtorr, film thickness d = 660 nm and substrate temperature Tg = 485 K. These films also have a reused probability several times without decreasing amount of Methylene Blue (MB) degradation.

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