Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow

2006 ◽  
Vol 200 (20-21) ◽  
pp. 6047-6053 ◽  
Author(s):  
E. Forniés ◽  
R. Escobar Galindo ◽  
O. Sánchez ◽  
J.M. Albella
2013 ◽  
Vol 770 ◽  
pp. 173-176 ◽  
Author(s):  
Suree Tongwanichniyom ◽  
Wichian Siriprom ◽  
Dhonluck Manop ◽  
Adisorn Buranawong ◽  
Jakrapong Kaewkhao ◽  
...  

Titanium dioxide (TiO2) thin films have been deposited on Si-wafer and glass slide by DC reactive magnetron sputtering technique at different O2 gas flow rates. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD), surface morphology was analyzed by atomic force microscopy (AFM) and disinfection of surfaces by photo catalytic oxidation with TiO2 and UV light irradiation. The results showed that, from GIXRD results, all as-deposited TiO2 films have crystal structure of TiO2 corresponding to the A(101) and A(200). AFM results showed that the film thicknesses increase from 183 nm to 238 nm with increasing of O2 gas flow rate, while the film roughness was in range of 4.8 nm to 5.9 nm. The as-deposited anatase TiO2 thin film in this work can kill the bacteria when expose to the UV light.


2009 ◽  
Vol 23 (23) ◽  
pp. 4817-4823 ◽  
Author(s):  
V. V. ATUCHIN ◽  
T. KHASANOV ◽  
V. A. KOCHUBEY ◽  
L. D. POKROVSKY ◽  
T. A. GAVRILOVA

Molybdenum nitride films γ- Mo 2 N/Si have been fabricated with reactive magnetron sputtering in ( N 2 + Ar ) gas mixture. Phase composition of the films has been defined with reflection high energy electron diffraction. Refractive index and extinction coefficient of γ- Mo 2 N have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Upper limit of γ- Mo 2 N film thickness measurable with laser ellipsometry has been found to be ~80 nm.


Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  

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