Application of Positron Beams to the Investigation of Memristive Materials and Diluted Magnetic Semiconductors

2012 ◽  
Vol 331 ◽  
pp. 235-251
Author(s):  
Kay Potzger ◽  
Maciej Oskar Liedke

After a general introduction to the field of resistive switching and spin electronics and the role of defects therein, recent investigations on the above mentioned topics including positron beams are reviewed. An ongoing project at the Helmholtz Centre Dresden-Rossendorf to further extend such investigations is briefly outlined and expected benefits are mentioned.

2015 ◽  
Vol 26 (4) ◽  
pp. 2466-2470 ◽  
Author(s):  
Hongbo Liu ◽  
Yang Liu ◽  
Lili Yang ◽  
Zhenguo Chen ◽  
Huilian Liu ◽  
...  

2002 ◽  
Vol 102 (4-5) ◽  
pp. 673-678 ◽  
Author(s):  
J. Mašek ◽  
I. Turek ◽  
V. Drchal ◽  
J. Kudrnovský ◽  
F. Máca

2003 ◽  
Vol 799 ◽  
Author(s):  
Yasuo Oka ◽  
Kentaro Kayanuma ◽  
Mio Sakuma ◽  
Ayahito Uetake ◽  
Izuru Souma ◽  
...  

ABSTRACTNanostructures of diluted magnetic semiconductors have potential possibility for the spin electronics application due to their large magneto-optical effects and the quantum confinement effects for band electrons. We have fabricated quantum wells and quantum dots by II-VI diluted magnetic semiconductors of Cd1-xMnxTe, Zn1-xMnxTe and Zn1-x-yCdyMnxSe. These nanostructures showed spin injection, spin switching and ultrafast spin relaxation processes derived in the confined nanostructures. Hybrid structures consisting of diluted magnetic semiconductor and Co showed Mn spin polarizations induced by the Co wire shape.


2010 ◽  
Vol 96 (21) ◽  
pp. 211905 ◽  
Author(s):  
Tongfei Shi ◽  
Zhenguo Xiao ◽  
Zhijun Yin ◽  
Xinhua Li ◽  
Yuqi Wang ◽  
...  

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