Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

2015 ◽  
Vol 26 (4) ◽  
pp. 2466-2470 ◽  
Author(s):  
Hongbo Liu ◽  
Yang Liu ◽  
Lili Yang ◽  
Zhenguo Chen ◽  
Huilian Liu ◽  
...  
2010 ◽  
Vol 96 (21) ◽  
pp. 211905 ◽  
Author(s):  
Tongfei Shi ◽  
Zhenguo Xiao ◽  
Zhijun Yin ◽  
Xinhua Li ◽  
Yuqi Wang ◽  
...  

2008 ◽  
Vol 18 (43) ◽  
pp. 5208 ◽  
Author(s):  
Igor Djerdj ◽  
Georg Garnweitner ◽  
Denis Arčon ◽  
Matej Pregelj ◽  
Zvonko Jagličić ◽  
...  

2009 ◽  
Vol 193 ◽  
pp. 012099
Author(s):  
Tongfei Shi ◽  
Yuqi Wang ◽  
Zhijun Yin ◽  
Yunpeng Zhang ◽  
Shishen Yan

2014 ◽  
Vol 636 ◽  
pp. 105-109
Author(s):  
Chun Ping Li ◽  
Hao Ran Ba ◽  
Kun Jin

The 5% Fe-doped ZnO nanorods (Zn0.95Fe0.05O) were prepared successfully by the wet-chemical synthesis method. Structure and morphology characterization were demonstrated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Laser power dependent photoluminescence (PL) spectra were measured to study the electronic structures of the Fe-doped ZnO-based diluted magnetic semiconductors. The contraction of lattice constant and structured green-yellow-red emissions were analyzed. Such investigations confirmed that the induced defects or impurities originating from Fe ions.


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