A Feed-Forward Sigma-Delta Modulator Applied in Silicon Gyroscope

2015 ◽  
Vol 645-646 ◽  
pp. 657-661
Author(s):  
Qi Shao ◽  
Qiu Ye Lv ◽  
Hao Meng ◽  
Qiang Fu ◽  
Xiao Wei Liu

Aiming to be applied in silicon gyroscope, a three-order single loop feedforward modulator with three-bit quantizer and local feedback is designed in this paper. Signal band is 200 KHz, sampling rate is 25.6 MHz, OSR is 64. Ideal modulator is then designed and simulated in MATLAB, getting SNR 125dB. Non-ideal factors are also added to ideal model, DWA technology is adopted to restrain the nonlinearity of multi-bit quantizer, getting SNR 104dB. Finally, transistor-level full-difference modulator is designed and simulated in Cadence, fetting SNR 101.3dB.

2014 ◽  
Vol 609-610 ◽  
pp. 1176-1180
Author(s):  
Liang Liu ◽  
Song Chen ◽  
Chong He ◽  
Liang Yin ◽  
Xiao Wei Liu

Sigma Delta modulator is widely used in ADC for kinds of micro inertial sensors, Sigma Delta ADC can be easily integrated with digital circuits. It possesses some performances of good linearity and high accuracy, while it has no such strict requirements for the match of device dimensions. In this paper, the design of third-order Sigma Delta modulator with a structure of single-loop full feed-forward is accomplished, meanwhile it uses local feedback for zero optimization to improve the shaping capacity of the modulator noise within the signal bandwidth. The OSR (over-sampling rate) of the modulator is 128 and the signal bandwidth is 10 kHz. By the system model building and simulation in the Simulink of MATALAB, the SNR is 96.3 dB and the ENOB is 15.71 bits. Then the modulator is implemented into transistor-level circuits with 0.5um process, by the simulation in Spectre of Cadence, the SNR is 88.5 dB and the ENOB is 14.41 bits. 搜


2019 ◽  
Vol 29 (07) ◽  
pp. 2050108
Author(s):  
Di Li ◽  
Chunlong Fei ◽  
Qidong Zhang ◽  
Yani Li ◽  
Yintang Yang

A high-linearity Multi-stAge noise SHaping (MASH) 2–2–2 sigma–delta modulator (SDM) for 20-MHz signal bandwidth (BW) was presented. Multi-bit quantizers were employed in each stage to provide a sufficiently low quantization noise level and thus improve the signal-to-noise ratio (SNR) performance of the modulator. Mismatch noise in the internal multi-bit digital-to-analog converters (DACs) was analyzed in detail, and an alternative randomization scheme based on multi-layer butterfly-type network was proposed to suppress spurious tones in the output spectrum. Fabricated in a 0.18-[Formula: see text]m single–poly 4-metal Complementary Metal Oxide Semiconductor (CMOS) process, the modulator occupied a chip area of 0.45[Formula: see text]mm2, and dissipated a power of 28.8[Formula: see text]mW from a 1.8-V power supply at a sampling rate of 320[Formula: see text]MHz. The measured spurious-free dynamic range (SFDR) was 94[Formula: see text]dB where 17-dB improvement was achieved by applying the randomizers for multi-bit DACs in the first two stages. The peak signal-to-noise and distortion ratio (SNDR) was 76.9[Formula: see text]dB at [Formula: see text]1 dBFS @ 2.5-MHz input, and the figure-of-merit (FOM) was 126[Formula: see text]pJ/conv.


2011 ◽  
Vol 32 (9) ◽  
pp. 095009
Author(s):  
Hongyi Li ◽  
Yuan Wang ◽  
Song Jia ◽  
Xing Zhang

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