2011 IEEE International Conference of Electron Devices and Solid-State Circuits
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173

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4

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Published By IEEE

9781457719974, 9781457719981, 9781457719967

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A low power 17% tuning range low phase noise VCOs using coupled LC tanks

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117644 ◽

2011 ◽

Author(s):

Mahalingam Nagarajan ◽

Kaixue Ma ◽

Kiat Seng Yeo ◽

Shou Xian Mou ◽

Thangarasu Bharatha Kumar

Keyword(s):

Low Power ◽

Phase Noise ◽

Tuning Range ◽

Low Phase Noise ◽

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Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117657 ◽

2011 ◽

Author(s):

L. X. Qian ◽

X. D. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

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A qualitative comparison study of analog performance of junction and junctionless poly-Si TFTs

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117609 ◽

2011 ◽

Author(s):

Shih-Wei Wang ◽

Jyi-Tsong Lin ◽

Yi-Chuen Eng ◽

Yu-Che Chang ◽

Chia-Hsien Lin ◽

...

Keyword(s):

Comparison Study ◽

Qualitative Comparison ◽

Analog Performance

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An optical receiver with automatic gain control circuit for 4G RoF technology

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117605 ◽

2011 ◽

Author(s):

Tian Ye ◽

Zhang Shilin ◽

Mao Luhong ◽

Xie Sheng ◽

Chen Yan

Keyword(s):

Automatic Gain Control ◽

Gain Control ◽

Control Circuit ◽

Optical Receiver

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Crystallization study for MgO in magnetic tunnel junction structure

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117679 ◽

2011 ◽

Author(s):

Yong-Le Lou ◽

Yu-Ming Zhang ◽

Da-Qing Xu ◽

Hui Guo ◽

Yi-Men Zhang ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Junction Structure ◽

Crystallization Study

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A two-dimensional short-channel model for threshold voltage of tri-gate (TG) MOSFETs with localized trapped charges

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117566 ◽

2011 ◽

Author(s):

T. K. Chiang ◽

D. H. Chang

Keyword(s):

Threshold Voltage ◽

Channel Model ◽

Two Dimensional ◽

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Lag free transfer transistor in CMOS image sensor pixel with a non-uniform doped gate

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117730 ◽

2011 ◽

Author(s):

Gao Zhiyuan ◽

Yao Suying ◽

Xu Jiangtao ◽

Li Binqiao ◽

Gao Cen

Keyword(s):

Cmos Image Sensor ◽

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EDSSC-2011 committee

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117560 ◽

2011 ◽

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Clock swing enhanced charge pump

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117705 ◽

2011 ◽

Author(s):

Jianping Ding ◽

Yuan Wang ◽

Song Jia ◽

Gang Du ◽

Xing Zhang

Keyword(s):

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Copyright page

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117558 ◽

2011 ◽

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