Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs
Keyword(s):
In this work, we describe a new way to measure spin dependent charge capture events at MOSFET interfaces called near-zero-field spin dependent charge pumping (NZF SDCP) which yields similar information as conventional electron paramagnetic resonance. We find that NO anneals have a significant effect on the spectra obtained from 4H-SiC MOSFETs. We also likely resolve hyperfine interactions which are important for defect identification. Finally, we fully integrate a NZF SDCP measurement system into a wafer prober for high throughput applications.
1988 ◽
Vol 88
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pp. 7380-7386
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2004 ◽
Vol 108
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pp. 9469-9474
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1986 ◽
Vol 59
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pp. 355-361
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2018 ◽
Vol 87
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pp. 013702
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2000 ◽
Vol 113
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pp. 1575-1579
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