A Physically Meaningful Relativistic Description of the Spin State of an Electron

We introduced a new model to present the states of a two-state quantum system. The space is the complexified Minkowski space. The Lorentz group acts by the linear extension of its action on the four-vectors. We applied this model to represent the spin state of an electron or any relativistic spin 1/2 particle. The spin state of such particle is of the form U+iS, where U is the four-velocity of the particle in the lab frame, and S is the 4D spin in this frame. Under this description, the transition probability between two pure spin states ϱ1 and ϱ2 of particles moving with the same velocity are defined by use of Minkowski dot product as 12<ϱ2|ϱ1>. This transition probability is Lorentz invariant, coincide with the quantum mechanics prediction and thus agree with the experimental results testing quantum mechanics predictions based on Bell’s inequality. For a a particle of mass m and charge q with the spin state ϱ, the total momentum is mcϱ and the electromagnetic momentum is qϱ. This imply that the Landé g factor for such particles must be g=2. We obtain an evolution equation of the spin state in an electromagnetic field which defines correctly the anomalous Zeeman effect and the fine structure splitting.

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D3h symmetric excitons. The lowest FSS obtained is 3.9 μeV with the lowest energy X state (LX) anticlockwise rotate from [1−10] (i.e., zero FSS will be crossed in a proper field). The lateral field projection induces a large eh separation and various FSS, LX, and emission intensity polarization. The lateral field along [1−10] breaks the X1–X2 wavefunction degeneracy for independent HH and VV cascade emissions with robust polarization correlation. With FSS ~4 μeV and T1 ~0.3 ns fastened in a distributed Bragg reflector cavity, polarization-resolved XX–X cross-correlations show fidelity ~0.55 to a maximal entangled state |HH> + |VV>. A higher fidelity and zero FSS will be obtained in the hybrid QD structure with a junction field integrated to tune the FSS and a sub-bandgap excitation to avoid influences from electrons in the barrier.

Structure Splitting for Elbrus Processor Compiler

This report presents a new version of Structure Splitting optimization, implemented for the compiler for Elbrus and SPARC processors. Structure Splitting tries to improve data locality by splitting arrays of structures into arrays of smaller structures. This solution helps to decrease probability of cache misses, which leads to execution time decrease. The optimization was generalized for the case of array of structures nested in another structure and possibility of its reallocation. Execution speed of two tests from SPEC CPU2000 and SPEC CPU2006 increased by 19 and 12 %.

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy

We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces. Despite a similar s-shell exciton structure common to the three cases, the absence of a wetting layer for (311)A and (111)A samples leads to a larger carrier confinement compared to (001), where a wetting layer is present. This leads to a more pronounced dependence of the binding energies of s-shell excitons on the quantum dot size and to the strong anti-binding character of the positive-charged exciton for smaller quantum dots. In-plane geometrical anisotropies of (311)A and (001) quantum dots lead to a large electron-hole fine interaction (fine structure splitting (FSS) ∼100 μeV), whereas for the three-fold symmetric (111)A counterpart, this figure of merit is reduced by about one order of magnitude. In all these cases, we do not observe any size dependence of the fine structure splitting. Heavy-hole/light-hole mixing is present in all the studied cases, leading to a broad spread of linear polarization anisotropy (from 0 up to about 50%) irrespective of surface orientation (symmetry of the confinement), fine structure splitting, and nanostructure size. These results are important for the further development of ideal single and entangled photon sources based on semiconductor quantum dots.

Polarization Anisotropies in Strain-Free, Asymmetric and Symmetric Quantum Dots Grown by Droplet Epitaxy

We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001) and (111)A surfaces. In spite of a similar s-shell exciton structure common to the three cases, the absence of a wetting layer for (311)A and (111)A samples leads to a larger carrier confinement with respect to (001), where a wetting layer is present. Moreover, this leads to a more pronounced dependence of the binding energies of s-shell excitons on the quantum dot size and to a strong anti-binding character of the positive charged exciton for smaller quantum dots. In-plane geometrical anisotropies of (311)A and (001) quantum dots lead to a large electron-hole fine interaction (fine structure splitting, FSS ~ 100 ueV) whereas for the three-fold symmetric (111)A counterpart this figure of merit is reduced of about one order of magnitude. In all these cases we do not observe any size dependence of the fine interactions. Heavy-hole/light-hole mixing is present in all the studied cases leading to a broad spread of linear polarization anisotropy (from 0 up to about 50%) irrespective of surface orientation (symmetry of the confinement), fine interactions and nanostructure size. These results are important for the further development of ideal single and entangled photon sources based on semiconductor quantum dots.