Efficiency Improvement of PV-Inverters with SiC-DMOSFETs
2008 ◽
Vol 600-603
◽
pp. 1231-1234
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Keyword(s):
Dc Power
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The new MOSFET-generation with SiC-materials seems well suited for power electronic converters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters, which transfer the DC power of the solar panel to the AC grid. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples made by CREE®.
2020 ◽
Vol 906
◽
pp. 012006
Keyword(s):
2013 ◽
Vol 43
(3)
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pp. 342-373
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Keyword(s):
2010 ◽
Vol 57
(2)
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pp. 617-623
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2009 ◽
Vol 58
(6)
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pp. 2689-2702
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