Multiferroic and Piezoelectric Behavior of Transition-Metal Doped ZnO Films

In this paper, we report the multiferroic and piezoelectric behavior observed in transition-metal doped ZnO films. The experimental results indicated that the Co-doped ZnO films deposited by magnetron sputtering possess a Curie temperature higher than 700K, and the magnetic moments of Co are intimatedly correlated to the doping concentration and the substrate. A giant magnetic moment of 6.1 B/Co is observed in (4 at.%) Co-doped ZnO films. Ferroelectric and ferromagnetic behaviors simultaneously were also obtained in V and Cr doped ZnO films on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method, revealing a multiferroic nature. The high piezoelectric d33 coefficient 80-120 pm/V has also been achieved by Cr and V substitutions, which could make Cr-doped or V-doped ZnO a promising material in piezoelectric devices.

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Structural and magnetic properties of transition metal doped ZnO films

Thin Solid Films ◽

10.1016/j.tsf.2009.09.047 ◽

2010 ◽

Vol 518 (8) ◽

pp. 2152-2156 ◽

Cited By ~ 13

Author(s):

C.G. Jin ◽

Y.Gao ◽

X.M. Wu ◽

M.L. Cui ◽

L.J. Zhuge ◽

...

Keyword(s):

Magnetic Properties ◽

Transition Metal ◽

Zno Films ◽

Structural And Magnetic Properties ◽

Doped Zno ◽

Metal Doped

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Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films

Thin Solid Films ◽

10.1016/j.tsf.2006.04.024 ◽

2006 ◽

Vol 515 (4) ◽

pp. 2549-2554 ◽

Cited By ~ 16

Author(s):

Qingyu Xu ◽

Lars Hartmann ◽

Heidemarie Schmidt ◽

Holger Hochmuth ◽

Michael Lorenz ◽

...

Keyword(s):

Transition Metal ◽

Pulsed Laser ◽

Zno Films ◽

Doped Zno ◽

Metal Doped

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ChemInform Abstract: Ferromagnetism and Possible Application in Spintronics of Transition-Metal-Doped ZnO Films

ChemInform ◽

10.1002/chin.200909227 ◽

2009 ◽

Vol 40 (9) ◽

Cited By ~ 1

Author(s):

F. Pan ◽

C. Song ◽

X. J. Liu ◽

Y. C. Yang ◽

F. Zeng

Keyword(s):

Transition Metal ◽

Zno Films ◽

Doped Zno ◽

Metal Doped

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Electronic structure and magnetic moments of 3d transition metal-doped ZnO

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2004.04.064 ◽

2004 ◽

Vol 282 ◽

pp. 275-278 ◽

Cited By ~ 101

Author(s):

Chang-Hong Chien ◽

Shan Haw Chiou ◽

G.Y. Guo ◽

Yeong-Der Yao

Keyword(s):

Electronic Structure ◽

Transition Metal ◽

Magnetic Moments ◽

Doped Zno ◽

Metal Doped

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Ga-Sn Co-Doped ZnO Films via Sol-Gel Route

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.280.43 ◽

2018 ◽

Vol 280 ◽

pp. 43-49

Author(s):

Zi Neng Ng ◽

Kah Yoong Chan

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Band Gap ◽

Doping Concentration ◽

Sol Gel ◽

Zno Films ◽

Axis Orientation ◽

Co Doping ◽

Doped Zno ◽

Co Doped

Zinc oxide (ZnO) has gained worldwide attention due to its direct wide band gap and large exciton binding energy, which are important properties in the application of emerging optoelectronic devices. By doping ZnO with donor elements, a combination of good n-type conductivity and good transparency in the visible and near UV range can be achieved. Co-doping ZnO with several types of dopants is also beneficial in improving the electronic properties of ZnO films. To the best of our knowledge, the fundamental properties of gallium-tin (Ga-Sn) co-doped ZnO (GSZO) films were rarely explored. In this work, we attempt to coat GSZO films on glass substrates via sol-gel spin-coating method. The Ga-Sn co-doping ratio was fixed at 1:1 and the concentration of the dopants was varied at 0.5, 1.0, 1.5, and 2 at.% with respect to the precursor. The AFM image show granular features on the morphology of all GSZO films. All samples also exhibit a preferential c-axis orientation as detected by XRD. The XRD indicates higher crystal quality and larger crystallite size on GSZO thin films at 2.0 at.% and agrees well with the AFM results. However, the transparency and optical band-gap of the GSZO thin films degrade with higher co-doping concentration. The best electrical properties were achieved at co-doping concentration of 1 at.% with conductivity and carrier density of 7.50 × 10-2S/cm and 1.37 × 1016cm-3, respectively. At 1.0 at.% co-doping concentration, optimal optical transmittance and electrical properties were achieved, making it promising in the application of optoelectronics.

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