Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
1999 ◽
Vol 69-70
◽
pp. 417-422
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1996 ◽
Vol 207-209
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pp. 821-824
1982 ◽
Vol 40
◽
pp. 78-79
1972 ◽
Vol 30
◽
pp. 496-497
Keyword(s):
2003 ◽
Vol 112
◽
pp. 963-967
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1964 ◽
Vol 25
(5)
◽
pp. 634-641
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1971 ◽
Vol 32
(C1)
◽
pp. C1-934-C1-936
◽
Keyword(s):