Low Temperature Cofiring and Dielectric Properties of Ca-Doped Al2O3/K2O3–B2O3–SiO2 Composite Ceramics for LTCC Applications

2018 ◽  
Vol 15 (2) ◽  
pp. 81-85
Author(s):  
Zhe Song ◽  
Joanna Chu ◽  
Kun Huang ◽  
Lasse Norén ◽  
Zhenxiao Fu ◽  
...  

Al2O3/K2O3–B2O3–SiO2 low temperature cofired ceramics (LTCC) dielectric materials doped with CaCO3 were prepared by using a solid-state reaction. The microstructure and dielectric properties of Al2O3/K–B–Si borosilicate, together with the effects of Ca doping, were investigated. A new material system candidate of Al2O3/KBSiO borosilicate doped by Ca was achieved after sintering at 880°C, which presents an optimized performance on dielectric properties with a permittivity εr < 8 and dielectric loss tan δ ≤ 0.002 and excellent stabilities across very broad frequency and temperature ranges. Most importantly, the initial results have also indicated that the new dielectric composite material is well compatible with the existing LTCC process, suggesting a considerable potential for practical LTCC applications.

2004 ◽  
Vol 85 (11) ◽  
pp. 2738-2744 ◽  
Author(s):  
Hyo Tae Kim ◽  
Thomas Shrout ◽  
Clive Randall ◽  
Michael Lanagan

2021 ◽  
Vol 2070 (1) ◽  
pp. 012058
Author(s):  
A Joshi ◽  
S C Bhatt ◽  
M Uniyal ◽  
K Kumar

Abstract Dielectric materials developed from Tantalum (Ta) doped AgNbO3 (ATN) show excellent properties in variety of electronic technologies. In the temperature range of 70 to 400 °C, four major dielectric abnormalities were observed in ATN (x = 0.1) while in ATN (x = 0.2) the maxima of M1-M2 phase shift to low temperature value. ATN ceramics’ dielectric properties dominate temperature and electric field-based performance, which has a major effect on their properties. This study looked into the dielectric properties in ATN.


2018 ◽  
Vol 281 ◽  
pp. 646-651
Author(s):  
Ping Ping Zhang ◽  
Jing Man ◽  
Hong Sheng Wang ◽  
Qi Hong Wei ◽  
Ying Gai ◽  
...  

Si3N4-BaTiO3 composite ceramics, a type of high dielectric materials applied in the multifunction radome, were prepared by gas pressure-sintering method. The influences of BaTiO3 power content on the mechanical performances, dielectric properties and microstructure of Si3N4-BaTiO3 composite ceramics were investigated. The results showed that the sintering density, the elastic modulus and the flexural strength of Si3N4-BaTiO3 composite ceramics all firstly increased and then decreased along with the increase of BaTiO3 power in sample. Meanwhile, Relationship between BaTiO3 power content and dielectric properties of Si3N4-BaTiO3 composite ceramics within the frequency range of 8.2–12.4 GHz (X-band) was studied. The average of dielectric constant e of Si3N4-BaTiO3 composite ceramics increased from 7.33 to 9.98 and the average of dielectric loss tand increased from 2.8 ´ 10-3 to 0.0168 when the content of BaTiO3 power increased from 0 to 25 wt.%. The increase of the dielectric properties of Si3N4–BaTiO3 composite ceramics were attributed to the electronic and molecular polarization at interface between Si3N4 and BaTiO3, compared with the pure matrix Si3N4.


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