Investigation of dielectric properties in tantalum doped AgNbO3 ceramic
2021 ◽
Vol 2070
(1)
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pp. 012058
Keyword(s):
Abstract Dielectric materials developed from Tantalum (Ta) doped AgNbO3 (ATN) show excellent properties in variety of electronic technologies. In the temperature range of 70 to 400 °C, four major dielectric abnormalities were observed in ATN (x = 0.1) while in ATN (x = 0.2) the maxima of M1-M2 phase shift to low temperature value. ATN ceramics’ dielectric properties dominate temperature and electric field-based performance, which has a major effect on their properties. This study looked into the dielectric properties in ATN.
2008 ◽
Vol 21
(11)
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pp. 1000-1004
2005 ◽
Vol 40
(23)
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pp. 6329-6331
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1958 ◽
Vol 13
(1)
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pp. 114-115
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Keyword(s):
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1981 ◽
pp. 305-312
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2019 ◽