AbstractEr-doped semiconductors are considered to be important for optical communication systems since one of the prominent luminescent peaks of Er is in the minimum absorption region of silica based fiber and wavelength of the luminescence is insensitive to the ambient temperature. In this work, OMVPE grown InP samples uniformly and δ-doped with Er were investigated by EXAFS and X-ray CTR measurements. The EXAFS measurement revealed that the uniformly doped Er atoms in InP grown at 580°C formed NaCl-structure ErP, and at 530°C occupied the In-sites. The X-ray CTR measurement revealed that the δ-doped Er atoms in InP at 530'C formed NaCl-structure ErP. In the sample, the total number of Er was analyzed to be about 0.171ML(monolayer), and the FWHM of Er distribution was about 5ML. By comparing the results of PL measurement with those of the EXAFS and the X-ray CTR measurements, it was suggested that the Er atoms on In-sites show high efficiency of luminescence and the Er atoms in the NaCl-structure ErP low efficiency.
Characterization of Wavelength Tunable Lasers for Future Optical Communication Systems
