Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

Author(s):  
F.M. De Paola ◽  
L.C.N. de Vreede ◽  
L.K. Nanver ◽  
N. Rinaldi ◽  
J.N. Burghartz
Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 133
Author(s):  
Aleksandr Vasjanov ◽  
Vaidotas Barzdenas

Broadband amplifiers are essential building blocks used in high data rate wireless, radar, and instrumentation systems, as well as in optical communication systems. Only a traveling-wave amplifier (TWA) provides sufficient bandwidth for broadband applications without reducing modern linearization techniques. TWA requires gate-line and drain-line termination, which can be implemented on- and off-chip. This article compares the performance of identical 0.13 μm CMOS TWAs, differing only in gate-line termination placement. Measurement results revealed that the designed TWAs with on- and off-chip termination have a bandwidth of 10 GHz with a maximum gain of 15 dB and a power-added efficiency (PAE) of 5%–22% in the whole operating frequency range. Placing the gate-line termination off-chip results in an S21 flatness reduction, compared to the gain of a TWA with on-chip termination. Gain fluctuation over frequency is reduced by 4–8 dB when the termination resistor is placed as an external circuit.


2010 ◽  
Vol 5 (2) ◽  
Author(s):  
Prince M. Anandarajah ◽  
Aleksandra Kaszubowska-Anandarajah ◽  
Robert Maher ◽  
Kai Shi ◽  
Liam P. Barry

1996 ◽  
Vol 422 ◽  
Author(s):  
M. Tabuchi ◽  
D. Kawamura ◽  
K. Fujita ◽  
N. Matsubara ◽  
N. Yamada ◽  
...  

AbstractEr-doped semiconductors are considered to be important for optical communication systems since one of the prominent luminescent peaks of Er is in the minimum absorption region of silica based fiber and wavelength of the luminescence is insensitive to the ambient temperature. In this work, OMVPE grown InP samples uniformly and δ-doped with Er were investigated by EXAFS and X-ray CTR measurements. The EXAFS measurement revealed that the uniformly doped Er atoms in InP grown at 580°C formed NaCl-structure ErP, and at 530°C occupied the In-sites. The X-ray CTR measurement revealed that the δ-doped Er atoms in InP at 530'C formed NaCl-structure ErP. In the sample, the total number of Er was analyzed to be about 0.171ML(monolayer), and the FWHM of Er distribution was about 5ML. By comparing the results of PL measurement with those of the EXAFS and the X-ray CTR measurements, it was suggested that the Er atoms on In-sites show high efficiency of luminescence and the Er atoms in the NaCl-structure ErP low efficiency.


2009 ◽  
Vol 129 (4) ◽  
pp. 601-607
Author(s):  
Shubi F. Kaijage ◽  
Yoshinori Namihira ◽  
Nguyen H. Hai ◽  
Feroza Begum ◽  
S. M. Abdur Razzak ◽  
...  

2009 ◽  
Vol E92-C (7) ◽  
pp. 922-928 ◽  
Author(s):  
Kikuo MAKITA ◽  
Kazuhiro SHIBA ◽  
Takeshi NAKATA ◽  
Emiko MIZUKI ◽  
Sawaki WATANABE

Sign in / Sign up

Export Citation Format

Share Document