A Lateral Trench Electrode Power MOSFET with Superior Electrical Characteristics for Smart Power IC Systems

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2004.17.1.027 ◽

2004 ◽

Vol 17 (1) ◽

pp. 27-30 ◽

Keyword(s):

Electrical Characteristics ◽

Smart Power ◽

Power Mosfet ◽

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Electrical characteristics of a new lateral trench electrode IGBT for smart power IC

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981439 ◽

2002 ◽

Author(s):

Ey Goo Kang ◽

Seung Hyun Moon ◽

Man Young Sung

Keyword(s):

Electrical Characteristics ◽

Smart Power ◽

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Lateral trench IGBT with effective p/sup +/ diverter having superior electrical characteristics for smart power IC

ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics Proceedings (Cat. No.01TH8570) ◽

10.1109/isie.2001.932032 ◽

2002 ◽

Author(s):

Ey Goo Kang ◽

Seung Hyun Moon ◽

Man Young Sung

Keyword(s):

Electrical Characteristics ◽

Smart Power ◽

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Smart power IC simulation of substrate coupled current due to majority and minority carriers transports

2010 IEEE International Conference on Integrated Circuit Design and Technology ◽

10.1109/icicdt.2010.5510262 ◽

2010 ◽

Author(s):

Fabrizio Lo Conte ◽

Jean-Michel Sallese ◽

Maher Kayal

Keyword(s):

Smart Power ◽

Power Ic ◽

Minority Carriers

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1.2-μM non-epi CMOS smart power IC with four H-bridge motor drivers for portable applications

1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96 ◽

10.1109/iscas.1996.540027 ◽

2002 ◽

Author(s):

Boeun Kim ◽

Cheolwoo Kim ◽

Sangchan Han ◽

Soowon Kim ◽

Hoonsoo Park ◽

...

Keyword(s):

Smart Power ◽

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Power Semiconductor Devices and Smart Power IC Technologies CFP

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2598234 ◽

2016 ◽

Vol 63 (9) ◽

pp. 3813-3813

Keyword(s):

Semiconductor Devices ◽

Smart Power ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

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Fast switching power semiconductor devices and Smart Power IC´s: An enabling technology for future high efficient electronic system

Proceedings of 2010 International Symposium on VLSI Technology, System and Application ◽

10.1109/vtsa.2010.5488902 ◽

2010 ◽

Author(s):

Leo Lorenz

Keyword(s):

Semiconductor Devices ◽

Electronic System ◽

Enabling Technology ◽

Smart Power ◽

Power Semiconductor ◽

Switching Power ◽

Fast Switching ◽

Power Semiconductor Devices ◽

High Efficient ◽

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Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET

2019 1st International Conference on Sustainable Renewable Energy Systems and Applications (ICSRESA) ◽

10.1109/icsresa49121.2019.9182412 ◽

2019 ◽

Author(s):

Hichem Bencherif ◽

Abderrahim Yousfi ◽

Lakhdar Dehimi ◽

Fortunato Pezzimenti ◽

Francesco G. Della Corte

Keyword(s):

Low Power ◽

Gate Dielectric ◽

Electrical Characteristics ◽

Power Mosfet ◽

High K ◽

Dielectric Effect ◽

High K Gate Dielectric

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Power Semiconductor Devices and Smart Power IC Technologies CFP

IEEE Electron Device Letters ◽

10.1109/led.2016.2599410 ◽

2016 ◽

Vol 37 (9) ◽

pp. 1253-1253

Keyword(s):

Semiconductor Devices ◽

Smart Power ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

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The Electrical Characteristics of the Fabricated Lateral Trench Electrode IGBT for Intelligent Power IC

Journal for Manufacturing Science and Production ◽

10.1515/ijmsp.2002.4.4.189 ◽

2002 ◽

Vol 4 (4) ◽

pp. 189-196

Author(s):

Ey Goo Kang, ◽

Sangsig Kim, ◽

Man Young Sung,

Keyword(s):

Electrical Characteristics ◽

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Combined Smart Power IC for VCR with PWM Controlled Motor Voltage

IEEE International Conference on Consumer Electronics ◽

10.1109/icce.1994.582166 ◽

1994 ◽

Author(s):

G. Gleim ◽

L. Bertolini ◽

F. Heizmann

Keyword(s):

Smart Power ◽

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