scholarly journals A Novel Hydrogen-reduced P-type Amorphous Silicon Oxide Buffer Layer for Highly Efficient Amorphous Silicon Thin Film Solar Cells

2016 ◽  
Vol 65 (10) ◽  
pp. 1702-1705
Author(s):  
Dong-Won Kang
2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.


2011 ◽  
Vol 57 (1) ◽  
pp. 73-75 ◽  
Author(s):  
M.C. Wang ◽  
T.C. Chang ◽  
S.W. Tsao ◽  
Y.Z. Chen ◽  
S.C. Tseng ◽  
...  

2019 ◽  
Vol 27 (24) ◽  
pp. 34542 ◽  
Author(s):  
Meiwei Kong ◽  
Jiaming Lin ◽  
Chun Hong Kang ◽  
Chao Shen ◽  
Yujian Guo ◽  
...  

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