Research on Changes in Short Circuit Current of C-Si Solar Cell by Charge Density Waves

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

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Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.399-401.1477 ◽

2011 ◽

Vol 399-401 ◽

pp. 1477-1480

Author(s):

Yan Li Xu ◽

Jin Hua Li

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Ion Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Textured Surface ◽

Si Solar Cell ◽

The One ◽

P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

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Design and Numerical Simulation on the Optical and Electrical Behavior of a ZnO:Al Nanowire Array a-Si pin Solar Cell

MRS Proceedings ◽

10.1557/proc-1101-kk05-11 ◽

2008 ◽

Vol 1101 ◽

Author(s):

Chang-Wei Liu ◽

Zingway Pei ◽

Shu-Tong Chang ◽

Ren-Yui Ho ◽

Min-Wei Ho ◽

...

Keyword(s):

Solar Cell ◽

Carrier Transport ◽

Fill Factor ◽

Cell Structure ◽

Short Circuit ◽

Nanowire Array ◽

Short Circuit Current ◽

Open Circuit ◽

Si Solar Cell ◽

Sun Light

AbstractOne of the parameters that limit the efficiency of a thin film solar cell, especially the a-Si and the nc-Si solar cell is the cell thickness. Although thicker film can absorb most of the sun light, the optical generated carriers will recombination through the numerous gap states in the film that obtained lower short circuit current and fill factor. In the controversy, thinner film could not absorb enough sun light that also limit the short circuit current. In this works, we utilize nanowire structure to solve the conflict between the light absorption and the carrier transport. The designed structure has ZnO:Al nanowire array on the substrate. The p-i-n a-Si solar cell structure is grown along the surface of each ZnO: Al nanowire sequentially. Under sunlight illumination, the light is absorbed in the axis direction of the nanowire. However, the carrier transport is along the radial direction of the solar cell. Therefore, the long nanowire could absorb most of the solar light. In the mean time, the thickness of the solar cell still is thin enough for photo-generated carrier transport. The dependence of short circuit current, open circuit voltage and fill factor to the length, diameter and density of ZnO:Al nanowires were simulated.

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