scholarly journals Relation of Conduction Path and Subthreshold Swing for Doping Profile of Asymmetric Double Gate MOSFET

2014 ◽  
Vol 18 (8) ◽  
pp. 1925-1930
Author(s):  
Hakkee Jung
Keyword(s):  
Subthreshold Swing ◽  
Doping Profile ◽  
Double Gate ◽  
Conduction Path ◽  
Double Gate Mosfet

scholarly journals Analysis of Subthreshold Swing of Symmetric Junctionless Double Gate MOSFET Using Gaussian Doping Profile

2022 ◽  
Vol 12 (1) ◽  
pp. 23-30
Author(s):  
Hakkee Jung ◽  
Keyword(s):  
Doping Concentration ◽  
Subthreshold Swing ◽  
Doping Profile ◽  
Double Gate ◽  
Conduction Path ◽  
Projected Range ◽  
Double Gate Mosfet ◽  
Silicon Thickness

—The variation of subthreshold swing(SS) according to the projected range (Rp ) and standard projected deviation (σp ) was analyzed when the symmetrical junctionless double gate (JLDG) MOSFET was doped with Gaussian doping profile. For this purpose, the analytical SS model was presented. We compared with the TCAD results to turn out the validity of this model, and the SSs of this model agreed with those of TCAD. The effective conduction path and mean doping concentration affecting the SS were analyzed according to the Rp and σp . As a result, the SS increased as the Rp and σp increased simultaneously. The smaller the Rp and the larger the σp , the lower the SS. When Rp = 1.5 nm, it showed the SS below 100mV/dec without being affected by the change of σp or silicon thickness. When σp = 3nm, it was also 100mV/dec or less regardless of the change of Rp and silicon thickness. Keywords— Double gate, Junctionless, Subthreshold swing, Gaussian, Projected range, Standard projected deviation

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