scholarly journals Analysis of Subthreshold Swing of Symmetric Junctionless Double Gate MOSFET Using Gaussian Doping Profile

2022 ◽  
Vol 12 (1) ◽  
pp. 23-30
Author(s):  
Hakkee Jung ◽  
Keyword(s):  
Doping Concentration ◽  
Subthreshold Swing ◽  
Doping Profile ◽  
Double Gate ◽  
Conduction Path ◽  
Projected Range ◽  
Double Gate Mosfet ◽  
Silicon Thickness

—The variation of subthreshold swing(SS) according to the projected range (Rp ) and standard projected deviation (σp ) was analyzed when the symmetrical junctionless double gate (JLDG) MOSFET was doped with Gaussian doping profile. For this purpose, the analytical SS model was presented. We compared with the TCAD results to turn out the validity of this model, and the SSs of this model agreed with those of TCAD. The effective conduction path and mean doping concentration affecting the SS were analyzed according to the Rp and σp . As a result, the SS increased as the Rp and σp increased simultaneously. The smaller the Rp and the larger the σp , the lower the SS. When Rp = 1.5 nm, it showed the SS below 100mV/dec without being affected by the change of σp or silicon thickness. When σp = 3nm, it was also 100mV/dec or less regardless of the change of Rp and silicon thickness. Keywords— Double gate, Junctionless, Subthreshold swing, Gaussian, Projected range, Standard projected deviation

scholarly journals Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs

2020 ◽  
Vol 10 (2) ◽  
pp. 1747
Author(s):  
Hakkee Jung
Keyword(s):  
Analytical Model ◽  
Potential Distribution ◽  
Geometric Mean ◽  
Oxide Thickness ◽  
Channel Length ◽  
Subthreshold Swing ◽  
Double Gate ◽  
Silicon Thickness ◽  
The Relationship ◽  
Scale Length

We propose an analytical model for subthreshold swing using scale length for sub-10 nm double gate (DG) MOSFETs. When the order of the calculation for the series type potential distribution is increased it is possible to obtain accuracy, but there is a problem that the calculation becomes large. Using only the first order calculation of potential distribution, we derive the scale length λ1 and use it to obtain an analytical model of subthreshold swing. The findings show this subthreshold swing model is in concordance with a 2D simulation. The relationship between the channel length and silicon thickness, which can analyze the subthreshold swing using λ1, is derived by the relationship between the scale length and the geometric mean of the silicon and oxide thickness. If the silicon thickness and oxide film thickness satisfy the condition of (Lg-0.215)/6.38 > tsi(=tox), it is found that the result of this model agrees with the results using higher order calculations, within a 4% error range.

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